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Hydrogen Bonding Configurations Determined From H Evolution

Published online by Cambridge University Press:  16 February 2011

W. B. Jackson ,
N.H. Nickel ,
N.M. Johnson ,
F. Pardo  and
P. V. Santos
W. B. Jackson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
N.H. Nickel
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
N.M. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
F. Pardo
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
P. V. Santos
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Hevolution spectra were measured for hydrogenated Amorphous silicon (a-Si:H) films of varying thickness. A low temperature evolution peak at about 380 °C was determined to arise from a surface monolayer. The bulk limited main peak of the evolution spectrum arises from a very narrow range of binding energies (<0.2 eV). The evolution spectra of a-Si:H, hydrogenated polycrystalline Si, and c-Si containing platelet structures are virtually identical in both size and temperature of the various peaks. Less than 5% of the H is released in an evolution peak occurring at about 800 °C, a peak possibly due to H bound at isolated dangling bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 311
Copyright
Copyright © Materials Research Society 1994

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References

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