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Hydrogen Diffusion in a-Sic:H

Published online by Cambridge University Press:  25 February 2011

F. Demichelis ,
C. F. Pirri ,
E. Tresso ,
G. Amato  and
G. Della Mea
F. Demichelis
Affiliation:
Dipartimento di Fisica, - Politecnico, - Torino
C. F. Pirri
Affiliation:
Dipartimento di Fisica, - Politecnico, - Torino
E. Tresso
Affiliation:
Dipartimento di Fisica, - Politecnico, - Torino
G. Amato
Affiliation:
I.E.N. Galileo Ferraris, - Torino
G. Della Mea
Affiliation:
Dipartimento Ingegneria dei Materiali, - Universita’ - Trento
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Abstract

In order to improve our understanding of the motion of hydrogen and the mechanism by which structural changes occurr, two sets of a-SiC:H samples obtained by glow-discharge at different substrate temperatures and power densities, respectively without and with hydrogen flow, were analyzed.

Results from structural, optical and electrical measurements show that annealing and hydrogen diffusion allow for a possible reorganization of the a-SiC:H amorphous network.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 739
Copyright
Copyright © Materials Research Society 1990

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References

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