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Hydrogen On Semiconductor Surfaces

Published online by Cambridge University Press:  10 February 2011

J. A. Schaefer ,
T. Balster ,
V. Polyakov ,
U. Rossow ,
S. Sloboshanin ,
U. Starke  and
F. S. Tautz
J. A. Schaefer
Affiliation:
Institut für Physik, Technische Universität Ilmenau, PO 10 05 65, D-98684 Ilmenau, Germany, tphys@physik.tu-ilmenau.de
T. Balster
Affiliation:
Institut für Physik, Technische Universität Ilmenau, PO 10 05 65, D-98684 Ilmenau, Germany, tphys@physik.tu-ilmenau.de
V. Polyakov
Affiliation:
Institut für Physik, Technische Universität Ilmenau, PO 10 05 65, D-98684 Ilmenau, Germany, tphys@physik.tu-ilmenau.de
U. Rossow
Affiliation:
Institut für Physik, Technische Universität Ilmenau, PO 10 05 65, D-98684 Ilmenau, Germany, tphys@physik.tu-ilmenau.de
S. Sloboshanin
Affiliation:
Institut für Physik, Technische Universität Ilmenau, PO 10 05 65, D-98684 Ilmenau, Germany, tphys@physik.tu-ilmenau.de
U. Starke
Affiliation:
Institut für Physik, Technische Universität Ilmenau, PO 10 05 65, D-98684 Ilmenau, Germany, tphys@physik.tu-ilmenau.de
F. S. Tautz
Affiliation:
Institut für Physik, Technische Universität Ilmenau, PO 10 05 65, D-98684 Ilmenau, Germany, tphys@physik.tu-ilmenau.de
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Abstract

We review structural and electronic aspects of the reaction of hydrogen with semiconductor surfaces. Among others, we address the Si(100), GexSi1-x(100), GaAs(100), InP(100), SiC(100), SiC(0001) and SiC(0001) surfaces. It is demonstrated that high resolution electron energy loss spectroscopy (HREELS) in conjunction with a number of other surface sensitive techniques like low energy electron diffraction (LEED) and photoelectron spectroscopy (XPS/UPS) can yield important information about the surface atomic structure, the effects of hydrogen passivation and etching and on electronic properties of the surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 3
Copyright
Copyright © Materials Research Society 1998

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References

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