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Hydrogen/Deuterium Interaction With CMOS Transistor Device Structure: Sintering Process Studied by Sims

Published online by Cambridge University Press:  10 February 2011

P. J. Chen  and
R. M. Wallace
P. J. Chen
Affiliation:
Si Technology Research Center Texas Instruments Inc., 13536 N. Central Expressway, M/S 921, Dallas, TX 75243
R. M. Wallace
Affiliation:
Si Technology Research Center Texas Instruments Inc., 13536 N. Central Expressway, M/S 921, Dallas, TX 75243
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Abstract

Passivation of the SiO2-Si interface by hydrogen/deuterium in MOS transistors serve to ensure their operating reliability against channel hot carriers. Physical characterization of device sintering process in deuterated forming gas (10%D2:90%N2) is carried out by dynamic SIMS on planar CMOS gate stack structures, in conjunction with device hot carrier electrical testing. It is found that incorporation of deuterium in the doped poly-Si/SiO2/Si interfacial region readily occurs under typical post-metallization sintering conditions, demonstrating that transport of deuterium through CMOS gate is an effective pathway in an encapsulated device structure with silicon nitride sidewalls. The measured Si-D areal densities in the interfacial region depend on gate poly-Si doping type, but in both cases, appear to be sufficient to achieve complete interface Si dangling bond (˜1012 cm−2) passivation for the SiO2-Si system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 325
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Lyding, J., Hess, K., and Kizilyalli, I., Appl. Phys. Lett. 68, 2526 (1996).Google Scholar
2. Kizilyalli, , Lyding, J. and Hess, K., IEEE Electron Devices Lett. 18, 81 (1997).Google Scholar
3. Van de Walle, C. G. and Jackson, W. B., Appl. Phys. Lett 69, 2441 (1996).Google Scholar
4. Hess, K., Kizilyalli, I., and Lyding, J. W., IEEE Trans. Electron Devices 45,406 (1998).Google Scholar
5. Lee, J, Aur, S., Eklund, R., Hess, K. and Lyding, J.W., J. Vac. Sci. Technol., in press.Google Scholar
6. Mogul, H. C., Cong, L., Wallace, R. M., Chen, P. J., Rost, T. A., Harvey, K., Appl. Phys. Lett. 72, 1721 (1998).Google Scholar
7. The ion yield increase of H+ in SiO2 vs. Si matrix tend to be offset by the rise in Si+ ion reference signal, based on our measurement of H+ implanted in SiO2 and Si, respectively. The same trend is assumed to hold true for D+.Google Scholar
8. Pearton, S. J., Corbett, J. W. and Stavola, M, Hydrogen in Crystalline Semiconductors Springer-Verlag (1992), and extensive references therein.Google Scholar
9. Chevallier, J. and Aucouturier, M., “Hydrogen in Crystalline Semiconductors”, Ann. Rev. Materl. Sci. 18, 219 (1988).Google Scholar
10. Brower, K. L., “Passivation of Paramagnetic Si-SiO2 Interface States with Molecular Hydrogen”, Appl. Phys. Lett. 53, 508 (1988).Google Scholar