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III-Nitride Epitaxial Material on Large-Diameter Semi-Insulating SiC Substrates for High Power RF Transistors

Published online by Cambridge University Press:  01 February 2011

Adam Saxler ,
Edward L. Hutchins ,
Jason Jenny  and
Austin Blew
Adam Saxler
Affiliation:
adam_saxler@cree.com, Cree, Inc., 4600 Silicon Drive, Durham, NC, 27703, United States
Edward L. Hutchins
Affiliation:
ed_hutchins@cree.com, Cree, Inc.
Jason Jenny
Affiliation:
jason_jenny@cree.com, Cree, Inc.
Austin Blew
Affiliation:
lei@lehighton.com, Lehighton Electronics, Inc.
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Abstract

Metalorganic chemical vapor deposition was employed to deposit high quality, highly uniform III-Nitride transistor structures on 100 mm diameter semi-insulating 4H-SiC substrates. Electron mobility was over 2000 cm2/Vs at room temperature. Sheet resistivity uniformity was as low as 0.75%. Typical standard deviations were about 1% in most properties including sheet resistivity, carrier concentration, mobility, and AlGaN composition. Additionally, wafers maintained their flat shape after deposition of these structures. Wafer bow and warp were typically less than 20 μm for optimized structures and <5 μm for the best wafers.

Keywords

Hall effectsemiconductingvapor phase epitaxy (VPE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF15-01
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1 Wu, Y.-F., Saxler, A., Moore, M., Smith, R. P., Sheppard, S., Chavarkar, P. M., Wisleder, T., Mishra, U. K., and Parikh, P., IEEE Elec. Dev. Lett. 25, 117 (2004).CrossRefGoogle Scholar
2 www.cree.com Google Scholar