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III-V Multi-Junction Materials and Solar Cells on Engineered SiGe/Si Substrates

Published online by Cambridge University Press:  01 February 2011

Steven A. Ringel ,
Carrie L. Andre ,
Matthew Lueck ,
David Isaacson ,
Arthur J. Pitera ,
Eugene A. Fitzgerald  and
David M. Wilt
Steven A. Ringel
Affiliation:
Department of Electrical and Computer Engineering, The Ohio State University, 2015. Neil Avenue, Columbus, OH 43210, USA
Carrie L. Andre
Affiliation:
Department of Electrical and Computer Engineering, The Ohio State University, 2015. Neil Avenue, Columbus, OH 43210, USA
Matthew Lueck
Affiliation:
Department of Electrical and Computer Engineering, The Ohio State University, 2015. Neil Avenue, Columbus, OH 43210, USA
David Isaacson
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77. Massachusetts Avenue, Cambridge, MA 02139, USA
Arthur J. Pitera
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77. Massachusetts Avenue, Cambridge, MA 02139, USA
Eugene A. Fitzgerald
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77. Massachusetts Avenue, Cambridge, MA 02139, USA
David M. Wilt
Affiliation:
Photovoltaic and Space Environments Branch, NASA Glenn Research Center, 21000. Brook Park Road, Cleveland, Ohio 44135, USA
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Abstract

The monolithic integration of high efficiency III-V compound solar cell materials and devices with lower-cost, robust and scaleable Si substrates has been a driving force in photovoltaics (PV) basic research for decades. Recent advances in controlling mismatch-induced defects that result from structural and chemical differences between III-V solar cell materials and Si using a combination of SiGe interlayers and monolayer-scale control of III-V/IV interfaces, have led to a series of fundamental advances at the material and device levels, which establish that the great potential of III-V/Si PV is within reach. These include demonstrations of GaAs epitaxial layers on Si that are anti-phase domain-free with verified dislocation densities at or below 1×106 cm−2 and negligible interface diffusion, minority carrier lifetimes for GaAs on Si in excess of 10 ns, single junction GaAs-based solar cells on Si with open circuit voltages (Voc) in excess of 980 mV, efficiencies beyond 18%, and area-independent PV characteristics up to at least 4 cm2. These advances are attributed in large part to the use of a novel “engineered Si substrate” based on compositionally-graded SiGe buffers such that a high-quality, low defect density, relaxed, “virtual” Ge substrate could be developed that can support lattice-matched III-V epitaxy and thus merge III-V technology based on the GaAs (or Ge) lattice constant with Si wafers. This paper focuses on recent results that extend this work to the first demonstration of high performance III-V dual junction solar cells on SiGe/Si. Open circuit voltages in excess of 2 V at one-sun have been obtained for the conventionally “lattice-matched” In0.49Ga0.51P/GaAs dual junction cells on inactive, engineered SiGe/Si; to our knowledge is the first demonstration of > 2V solar power generation on a Si wafer. Comparisons with identical cells on GaAs substrates reveal that the Voc on engineered Si retains more than 94% of its homoepitaxial value, and that at present both DJ/GaAs and DJ/SiGe/Si cells are similarly limited by current mismatch in these early cells, and not fundamental defect factors associated with the engineered Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L6.2
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Ringel, S. A.., Andre, C. L., Hudait, M. K., Wilt, D. M., Clark, E. B., Pitera, A. J., Lee, M. L., Fitzgerald, E. A., Carroll, M., Erdtmann, M., Carlin, J. A., and Keyes, B. M., Proc. 3rd World Conf. on Photov. Energy Conv., Vol. 1, pp. 612–615 (2003).Google Scholar
2. Kwon, O., Boeckl, J., Lee, M. L., Pitera, A. J., Fitzgerald, E. A., and Ringel, S. A. in Progress in Compound Semiconductor III - Materials Electronic and Optoelectronic Applications, edited by Friedman, D., Manasreh, M.O., Buyanova, I., Auret, F.D., Munkholm, A., (Mater. Res. Soc. Symp. Pro., 799, Boston, MA, 2004) Z3.4.1.Google Scholar
3. Currie, M. T., Samavedam, S. B., Langdo, T. A., Leitz, C. W., and Fitzgerald, E. A., Appl. Phys. Lett., 72, 1718 (1998).Google Scholar
4. Sieg, R. M., Ringel, S. A., Ting, S. M., Samavedam, S. B., Currie, M. T., Langdo, T. A., and Fitzgerald, E. A., “Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1−x Gex/Si substrates,” J. Vac. Sci. Technol. B, 16, no. 3, 1471 (1998)Google Scholar
5. Carlin, J. A., Ringel, S. A., Fitzgerald, E. A., Bulsara, M., and Keyes, B. M., “Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates,” Appl. Phys. Lett., 76, 1884 (2000).Google Scholar
6. Andre, C. L., Carlin, J. A., Boeckl, J. J., Wilt, D. M., Smith, M. A., Pitera, A. J., Lee, M. L., Fitzgerald, E. A., and Ringel, S. A., “Investigations of high performance GaAs solar cells grown on Ge/Si1−x Gex/Si substrates”, submitted to IEEE Tran. in Electron Dev. (2004).Google Scholar
7. Andre, C. L., Pitera, A. J., Lee, M. L., Fitzgerald, E. A., and Ringel, S. A., “Dual junction In0.49Ga0.51P/GaAs solar cells grown on metamorphic SiGe substrates”, submitted to IEEE Electron Device Lett. (2004).Google Scholar
8. Andre, C. L., Wilt, D. M., Pitera, A. J., Lee, M. L., Fitzgerald, E. A., Keyes, B. M., and Ringel, S. A., Appl. Phys. Lett., 84, pp. 3447 (2004).Google Scholar
9. Ahrenkiel, R. K., Al-Jassim, M. M., Keyes, B. M., Dunlavy, D., Jones, K. M., Vernon, S. M., and Dixon, T. M., J. Electrochem. Soc., 137, 996 (1990).Google Scholar
10. Yamaguchi, M., Amano, C., and Itoh, Y., J. Appl. Phys., 66, 915 (1989).Google Scholar
11. Wilt, D. M., Fatemi, N. S., Hoffman, R. W., Jenkins, P. P., Brinker, D. J., Scheiman, D., Lowe, R., Fauer, M., and Jain, R. K., Appl. Phys. Lett., 64, 2415 (1994).Google Scholar
12. Boeckl, J. J., “Structural Characterization of GaAs grown on Ge and SiGe substrates” Ph.D. dissertation, Dept. Elect. and Comp. Eng., The Ohio State Univ., Columbus, OH, 2005.Google Scholar
13. Vernon, S. M., Tobin, S. P., Haven, V. E. Jr, Bajar, C., and Dixon, T. M., Proc. 20th Photov. Spec. Conf., pp. 481–485 (1988).Google Scholar
14. Tobin, S. P., “Progress in Gallium Arsenide Solar Cell Research,” Proc. of the Photov. Science and Engineering Conf., Australia, 1989, Paper 4.1.Google Scholar
15. Yamaguchi, M. and Amano, C., J. Appl. Phys., 58, 3601 (1985)Google Scholar
16. Chu, C., Proc. 28th IEEE Photov. Spec. Conf., pp. 1250–1252 (2000).Google Scholar
17. Bertness, K. A., Kurtz, S. R., Friedman, D. J., Kibbler, A. E., Kramer, C., and Olson, J. M.,, Appl. Phys. Lett., 65, 989 (1994).Google Scholar
18. Andre, C. L., “III-V semiconductors on SiGe substrates for multi-junction photovoltaics” Ph.D. dissertation, Dept. Elect. and Comp. Eng., The Ohio State Univ., Columbus, OH, 2004.Google Scholar