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Impact Ionization, Degradation, and Breakdown in SiO2

Published online by Cambridge University Press:  22 February 2011

D. J. Dimaria ,
E. Cartier  and
D. Arnold
D. J. Dimaria
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
E. Cartier
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
D. Arnold*
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, N.Y. 10598
*
* University of Illinois at Chicago, Department of Electrical Engineering and Computer Science, 1136 Science and Engineering Offices, Box 4348, Chicago, IL 60680.
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Abstract

Destructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping ner the interfaces of the films. Two well defined transitions in the chargc-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of mechanisms due to trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV (the SiO2 bandgap energy), respectively. The temperature dependence of charge-to-breakdown is also shown to be consistent with that of these two defect-producing mechanisms.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 219
Copyright
Copyright © Materials Research Society 1993

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References

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