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Impact of Gate Metal on Surface States Distribution and Effective Surface Barrier Height in AlGaN/GaN Heterostructures

Published online by Cambridge University Press:  02 May 2013

Nitin Goyal  and
Tor A. Fjeldly
Nitin Goyal
Affiliation:
Department of Electronics and Communication, Norwegian University of Science and Technology, Trondheim, Norway
Tor A. Fjeldly
Affiliation:
Department of Electronics and Communication, Norwegian University of Science and Technology, Trondheim, Norway
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Abstract

A physics based model is presented to describe the surface donor density distribution for metal/AlGaN/GaN structures. This model partly relies on experimental observations to describe the reduction that takes place in surface donor density when the metal gate is deposited. This new model is based on our previous work on the bare surface barrier height for both unrelaxed and partially relaxed barrier layers. The model predictions are consistent with reported experimental data.

Keywords

III-Vbarrier layernitride
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1538: Symposium FF – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls , 2013 , pp. 335 - 340
Copyright
Copyright © Materials Research Society 2013 

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References

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