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Implant Dose and Spike Anneal Temperature Relationships

Published online by Cambridge University Press:  21 March 2011

K. K. Bourdelle ,
A. T. Fiory ,
H.-J. L. Gossmann  and
S. P. McCoy
K. K. Bourdelle
Affiliation:
Agere Systems, Orlando FL 32819
A. T. Fiory
Affiliation:
Agere Systems, Murray Hill NJ 07974
H.-J. L. Gossmann
Affiliation:
Agere Systems, Murray Hill NJ 07974
S. P. McCoy
Affiliation:
Vortek Industries, Vancouver, B.C., CanadaV6P6T7
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Abstract

The method of ion implantation and spike annealing for preparing shallow junctions suitable for the extension regions bridging the channel and source/drain contacts of CMOS transistors are studied by annealing blanket implants. Junction depths at a given sheet resistance for low energy B implants are minimized for the combination of a fast ramp with a sharp-spike anneal. This is shown to be physically based on activation energy phenomenology. The fraction of electrically activated B is insensitive to implant dose, unlike the case of transient enhanced diffusion. Arsenic implants show higher activation fraction than comparably annealed P implants, without the large transient enhanced diffusion which is attributed to P and Si-interstitial coupled diffusion. For targeted sheet resistance and junction depth, spiking temperature trends lower with implant dose, concomitant with decreasing fraction of activated dopant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J8.1
Copyright
Copyright © Materials Research Society 2001

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References

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