Hostname: page-component-6bf8c574d5-w79xw Total loading time: 0 Render date: 2025-02-22T16:43:30.274Z Has data issue: false hasContentIssue false
  • English
  • Français

Implantation Induced Filamentary Structures

Published online by Cambridge University Press:  25 February 2011

C. Jaussaud ,
B. Maillot  and
M. Bruel
C. Jaussaud
Affiliation:
Leti - Commissariat A L'Energie Atomique85 X, 38041 Grenoble Cedex, France
B. Maillot
Affiliation:
Leti - Commissariat A L'Energie Atomique85 X, 38041 Grenoble Cedex, France
M. Bruel
Affiliation:
Leti - Commissariat A L'Energie Atomique85 X, 38041 Grenoble Cedex, France
Get access

Abstract

Heavy rare gases implantations have been performed in layered structures : Sb/In/Si bulk and Sb/Ga/Si bulk. Layer thicknesses lie in the range of 150 Å – 600 Å, ion doses in the range of 1014 cm−2 – 1016cm−2

Ion implantation induces in such structures a change in the visual aspect from a metallic appearance to a dark black aspect. This modification corresponds to the creation of voids with, as a consequence, the expansion of the structure. This effect is so important that even for low and medium doses, the structure becomes filamentary. Expansions as high as 2,8 μm have been measured. SEM photographs illustrate this spectacular effect.

Relations between expansion and implantation parameters are given. A comparison between this effect and those observed in bulk InSb, GaSb and Ge is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 223
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Implantation ionique au travers de couches d'antimoine déposées sur silicium. Etude des phénomènes de surface et d'interface. Brigitte MAILLOT - Thèse de 3ème cycle - 11.06.82. Univ. de Grenoble.Google Scholar
2. BRUEL, M. and MAILLOT, B. Proceedings ot the International Ion Engineering Congress ISIAT'83 and IPAT'83 12–14 sept. 83 KYOTO JAPAN P1773Google Scholar
3. GONSER, U. and OKKERSE, B., Phys. Rev. 105 757 (1957)Google Scholar
4. KLEITMAN, D. and YEARIAN, H.J. Phys. Rev. 108 901 (1957)Google Scholar
5. DANILOV, Yu. A. and TULOVCHIKOV, V.S. Sov. Phys. Semicond. 14, 117 (1980)Google Scholar
6. WILSON, I.H. Low Energy Ion Beams Bath 1980 Conference series Number 54. The Institute of Physics Bristol and London. p.262Google Scholar
7. DESTEFANIS, G.L. and GAILLIARD, J.P. Appl. Phys. Lett. 36, 40 (1980)Google Scholar
8. HOLLAND, O.W., APPLETON, B.R. and NARAYAN, J. J. Appl. Phys. 54, 2295 (1983).Google Scholar