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Importance of Internal Ion Beam Parameters on the Self-organized Pattern Formation with Low-energy Broad Beam Ion Sources

Published online by Cambridge University Press:  31 January 2011

Marina I Cornejo
Affiliation:
marina.cornejo@iom-leipzig.de, Leibniz-Institut für Oberflächenmodifizierung, Leipzig, Germany
Bashkim Ziberi
Affiliation:
bashkim.ziberi@iom-leipzig.de, Leibniz-Institut für Oberflächenmodifizierung, Leipzig, Germany
Michael Tartz
Affiliation:
michael.tartz@iom-leipzig.de, Leibniz-Institut für Oberflächenmodifizierung, Leipzig, Germany
Horst Neumann
Affiliation:
horst.neumann@iom-leipzig.de, Leibniz-Institut für Oberflächenmodifizierung, Leipzig, Germany
Frank Frost
Affiliation:
frank.frost@iom-leipzig.de, Leibniz-Institut für Oberflächenmodifizierung, Leipzig, Germany
Bernd Rauschenbach
Affiliation:
bernd.rauschenbach@iom-leipzig.de, Leibniz-Institut für Oberflächenmodifizierung, Leipzig, Germany
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Abstract

The low energy ion beam erosion of solid surfaces is a simple bottom-up approach for the generation of nanostructures. For certain sputtering conditions caused by self-organization processes well ordered nanostructures on the surface like one-dimensional ripples or regular arrays of dots can be formed [1]. Using broad beam sources, the low energy ion beam erosion can be a cost-efficient method to produce large-area nanostructured surfaces in a one-step process.

The processes involved have been studied in the last decades and the pattern formation is attributed to the competition of curvature dependant sputtering and various relaxation mechanisms. It is also well known that the ion beam incidence angle (the angle between the sample surface normal and the axis of the beam source) is one critical parameter that determines the surface topography. However, inherent to all broad beam sources, the ion beam exhibits a certain divergence, i.e. the ion trajectories are not parallel to each other. This generates a spread of the local incidence angle with respect to the geometrically defined beam incidence angle.

Recent studies showed that the divergence angle and angular distribution of the ions, here called internal beam parameters, also affect the surface topography [2].

The angular distribution can be controlled by the total voltage applied on the geometrical defined ion optical system of the broad beam ion source. For the given multi-aperture two-grid ion optical system the total voltage is the sum of the voltages applied to the first (screen) and second (accelerator) grid. This total voltage, together with the geometrical characteristics of the used grid systems, including the shape of the plasma sheath boundary at the screen grid, define the overall ion-optical parameters of the source, i. e. the divergence angle and angular distribution of the ions within the beam.

In this contribution a first approach of the effect of the internal beam parameters on the surface topography is presented. It was analyzed the effect on the topography on Si surfaces of some experimental parameters that affect the internal beam parameters by changing the ion-optical parameters and the shape of the plasma sheath boundary. Explicitly, the influence of the discharge voltage, the operation time and the distance between the screen and accelerator grid is shown.

[1] B. Ziberi, M. Cornejo, F. Frost, B. Rauschenbach, J. Phys.: Condens. Matter (submitted).[2] B. Ziberi, F. Frost, M. Tartz, H. Neumann, B. Rauschenbach, Appl. Phys. Lett. 92, 063102 (2008)

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

[1] Carter, G.The physics and applications of ion beam erosion,” Journal of Physics D: Applied Physics, vol. 34, p. 22, 2001.Google Scholar
[2] Chan, W. L. and Chason, E.Making waves: Kinetic processes controlling surface evolution during low energy ion sputtering,” Journal of Applied Physics, vol. 101, p. 46, 2007.Google Scholar
[3] Cuerno, R. Makse, H. A. Tomassone, S. Harrington, S. T. and Stanley, H. E.Stochastic Model for Surface Erosion via Ion Sputtering: Dynamical Evolution from Ripple Morphology to Rough Morphology,” Physical Review Letters, vol. 75, p. 4, 1995.Google Scholar
[4] Makeev, M. A. Cuerno, R. and Barabási, A.-L., “Morphology of ion-sputtered surfaces,” Nuclear Instruments & Methods in Physics Research, section B, vol. 197, p. 43, 2002.Google Scholar
[5] Valbusa, U. Boragno, C. and Mongeot, F. Buatier de, “Nanostructuring surfaces by ion sputtering,” J. Phys.: Condens., Matter vol. 14, p. 22, 2002.Google Scholar
[6] Ziberi, B. “Ion Beam Induced Pattern Formation on Si and Ge Surfaces,” in Fakultät für Physik und Geowissenschaften. vol. Doktor Leipzig: Leipzig University, 2006.Google Scholar
[7] Ziberi, B. Frost, F. Neumann, H. and Rauschenbach, B.Ripple rotation, pattern transitions, and long range ordered dots on silicon by ion beam erosion,” Applied Physics Letters, vol. 92, p. 063102, 2008.Google Scholar
[8] Ziberi, B. Frost, F. Tartz, M. Neumann, H. and Rauschenbach, B.Importance of ion beam parameters on self-organized pattern formation on semiconductor surfaces by ion beam erosion,” Thin Solid Films, vol. 459, pp. 106110, 2004.Google Scholar
[9] Carbone, D. Alija, A. Plantevin, O. Gago, R. Facsko, S. and Metzger, T. H.Early stage of ripple formation on Ge(001) surfaces under near-normal ion beam sputtering,” Nanotechnology, vol. 19, p. 5, 2008.Google Scholar
[10] Cuenat, A. and Aziz, M. J.Spontaneous Pattern Formation from Focused and Unfocused Ion Beam Irradiation,” Materials Research Society Symposia Proceedings, vol. 969, p. 6, 2002.Google Scholar
[11]Hofer, C. Abermann, S. Teichert, C. Bobek, T. Kurz, H. Lyutovich, K. and Kasper, E.Ion bombardment induced morphology modifications on self-organized semiconductors surfaces,” Nuclear Instruments & Methods in Physics Research, section b, vol. 216, p. 7, 2004.Google Scholar
[12] Ludwig, F. J. Eddy, C. R. J. Malis, O. and Headrick, R. L.Si(100) surface morphology evolution during normal-incidence sputtering with 100-500 eV Ar+ ions,” Applied Physics Letters, vol. 81, p. 3, 2002.Google Scholar
[13] Tartz, M.Simulation des Ladungstransportes in Breitstrahlionenquellen,” in Fakultät für Physik und Geowissenschaften. vol. Doktor Leipzig: Leipzig University, 2003.Google Scholar
[14] Zeuner, M. Neumann, H. Scholze, F. Flamm, D. Tartz, M. and Bigl, F.Characterization of a modular broad beam ion source,” Plasma Sources Sci. Technology, vol. 7, pp. 252267, 1998.Google Scholar
[15] Frost, F. Ziberi, B. Schindler, A. and Rauschenbach, B.Surface engineering with ion beams: from self-organized nanostructures to ultra-smooth surfaces,” Appl. Phys. A, vol. 91, p.9, 2008.Google Scholar
[16] Becker, R. and Herrmannsfeldt, W. B.IGUN- A program for the simulation of positive ion extraction including magnetic fields,” Review of Scientific Instruments, vol. 63, p. 3, 1992.Google Scholar
[17] Tartz, M. Hartmann, E. and Neumann, H.Validated simulation for the ion extraction grid lifetime,” Review of Scientific Instruments, vol. 79, p. 02B905, 2008.Google Scholar