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Improved Characteristic Temperature (TO) of a 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode Through Thermal Annealing

Published online by Cambridge University Press:  10 February 2011

T. Kitatani
Affiliation:
RWCP Optical Interconnection Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd. 1–280 Higashi-Koigakubo, Kokubunji-shi, Tokyo, 185–8601, Japan
M. Kondow
Affiliation:
RWCP Optical Interconnection Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd. 1–280 Higashi-Koigakubo, Kokubunji-shi, Tokyo, 185–8601, Japan
K. Nakahara
Affiliation:
RWCP Optical Interconnection Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd. 1–280 Higashi-Koigakubo, Kokubunji-shi, Tokyo, 185–8601, Japan
K. Uomi
Affiliation:
Central Research Laboratory, Hitachi, Ltd. 1–280 Higashi-Koigakubo, Kokubunji, Tokyo, 185–8601, Japan Currently with: Telecommunications System Group, Hitachi, Ltd. 216 Totsuka. Yokohama. Kanagawa, 244–8567, Japan
T. Tanaka
Affiliation:
Central Research Laboratory, Hitachi, Ltd. 1–280 Higashi-Koigakubo, Kokubunji, Tokyo, 185–8601, Japan
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Abstract

Through optimal thermal annealing of the active region of a 1.3 μm GaInNAs/GaAs single-quantum-well laser diode, we obtained a characteristic temperature (T0) of 215 K under pulsed operation from 20°C to 80°C. This is the highest yet reported value for a 1.3-μm semiconductor laser. Even under continuous-wave operation, the T0 was as high as 147 K. The lasing-wavelength change with temperature was as small as 0.39 nm/°C, indicating the excellent stability for a GalnNAs laser diode with T0 of over 200 K. These results demonstrate that GaInNAs is a promising material for fabricating long-wavelength laser diodes used for opticalfiber communications.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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