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Improved performance of GaSb-based MIR photodetectors through electrochemical passivation in sulphur containing solutions
Published online by Cambridge University Press: 26 February 2011
Abstract
Sulfur passivation effects on the performance of LPE-grown GaSb/InGaAsSb/AlGaAsSb mesatype photodiodes operating in wavelengths range 1.9 – 2.3 μm have been investigated. (NH4)2S, Na2S, and (NH2)2CS have been chosen as sulfur sources in either aqueous or C3H7OH solutions. Electrochemical passivation of mesa side walls was proven to reduce photodiodes dark current and increasing their differential resistance by a factor of 4. As a result devices characterized by the detectivity of 1.5–2×1010 cmHz1/2/W and dark current density of 20 mA/cm2 at –0.5V bias have been fabricated and their long-term stability has been proven.
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- Copyright © Materials Research Society 2005