Hostname: page-component-6bf8c574d5-b4m5d Total loading time: 0 Render date: 2025-02-22T23:43:41.178Z Has data issue: false hasContentIssue false
  • English
  • Français

Improved structural properties of sputtered hafnium dioxide on silicon and silicon oxide for semiconductor and sensor applications

Published online by Cambridge University Press:  01 February 2011

H. Grüger ,
Ch. Kunath ,
E. Kurth ,
W. Pufe  and
S. Sorge
H. Grüger
Affiliation:
Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany
Ch. Kunath
Affiliation:
Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany
E. Kurth
Affiliation:
Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany
W. Pufe
Affiliation:
Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany
S. Sorge
Affiliation:
Fraunhofer IPMS, Grenzstr. 28, 01109 Dresden, Germany
Get access

Abstract

Hafnium dioxide HfO2 is a candidate with promising properties for semiconductor industries as well as for optical and sensorial applications under harsh environments. The material can be deposited using various techniques such as CVD or PVD in different thickness ranges. The chemical inertness of HfO2 and the high band gap draw the attention of this paper towards application in optics as active and protective layer at the same time, chemical and physical sensors, such as moisture sensors and thin film capacities. In order to improve the layer properties with the sensorial application in mind, the deposition process and the post-processing need to be tightly controlled.

Layers with thicknesses between 100 and 150nm have been deposited by r.f. sputtering of a high purity HfO2 target onto bare or oxidized silicon wafers under Ar- or Ar/O2-athmospheres. Initially the HfO2 has a mainly amorphous structure. Subsequent annealing controls the growth of recrystallized areas characterized by grain size and ratio between crystals and amorphous bodies. High heating rates of about 50K/s and annealing temperatures ranging 800 to 1000°C in a rapid thermal annealing (RTA) chamber seem to be advantageous for the properties desired. The layer's structure such as grain size, crystal type and orientation was investigated using AFM, TEM and XRD. Layer tension was evaluated using laser deflection. The differences in structure found have been correlated to the chemical inertness obtained in measurements for layer applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E6.25
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Gua, S., Cartier, E., Bojarczuk, N. A., Bruley, J., Gignac, L, Karasinski, J., “High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic beam deposition”, J. Appl. Phys. 90 (2001) 512 Google Scholar
[2] Jonsson, A. K., Niklasson, G. A., Veszelei, M., “Electrical properties of ZrO2 thin films”, Thin Solid Films 402 (2002) 242–247 Google Scholar
[3] Chang, J. P., Lin, Y.-S. “Highly conformal ZrO2 deposition for dynamic random access memory application”, J. Appl. Phys. 90 (2001) 6, 2964–2969Google Scholar
[4] Cho, M.-H., Ko, D.-H., Choi, Y. K., Lyo, I. W., Jeong, K., Whang, C. N., “Epitaxial Y2O3 film growth on am oxidized Si surface”, Thin Solid Films 402 (2002) 38–42 Google Scholar
[5] Hussain, Z., “Optical and electronchromic properties of heated and annealed MoO3 thin films”, J. Mater. Res. 16(2001)9, 2695–2708 Google Scholar
[6] Campbell, S. A., Kim, H.-S., Gilmer, D. C., He, B., Ma, T., Gladfelter, M. L., “Titanium dioxide (TiO2)-based gate insulators”, IBM J. Res. Develop, 43(1995)3, 383–392 Google Scholar
[7] Regraguui, M., Jousseaume, V., Addou, M., Outzourhit, A., Bernéde, J., Idrissi, B., “Electrical and optical properties of WO3 thin films”, Thin solid Films 397 (2001) 238–243 Google Scholar
[8] Grüger, H., Kunath, Ch., Kurth, E., Sorge, S., Pufe, W., Pechstein, T., “High quality r.f. sputtered metal oxides (Ta2O5, HfO2) and their properties after annealing“, Thin solid films, in press (2003)Google Scholar
[9] Hornbogen, E., Warlimont, H., Metallkunde, Kap. 2, Springer Verlag, Berlin, Heidelberg, New York, 3rd Edition, 1996 Google Scholar
[10] Gmelins Handbuch der anorganischen Chemie, Bandreihe HfGoogle Scholar
[11] Cho, M., Roh, Y.S., Wang, C.N., Jeong, K., Nahm, S.W., Ko, D.-H., Lee, J.H., Lee, N.I., Fujihara, K., “Thermal stability and structural characteristics of HfO2 thin films on Si (100) grown by atomic layer deposition”, Appl. Phys. Lett. Vol. 81 No. 3 (2002) 472–474 Google Scholar
[12] Kuo, C. T., Kwor, R., Jones, K. M., “Study of sputtered HfO2 thin films on silicon“, Thin Solid Films 213 (1992) 257–264 Google Scholar
[13] Manory, R., Mori, T., Shimizu, I., Miyake, S., “Growth and structure control of HfO2-x films with cubic and tetragonal structures obtained by ion beam assisted deposition”, J. Vac. Sci. Technol. A 20 (2002)2, 549–554 Google Scholar
[14] Miyata, N., Ichikawa, M., Nabatame, T., Horikawa, T., Toriumi, A., “Thermal stability of a thin HfO2 / ultrathin SiO2 / Si Structure: Interfacial Si oxidation and silicidation”, Jpn. J. Appl. Phys. Vol. 42 (2003) L138-L140Google Scholar