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Improvement in Wide-Gap A-SI:H For High-Efficiency Solar Cells

Published online by Cambridge University Press:  21 February 2011

Sadaji Tsuge ,
Yoshihiro Hishikawa ,
Shingo Okamoto ,
Manabu Sasaki ,
Shinya Tsuda ,
Shoichi Nakano  and
Yukinori Kuwano
Sadaji Tsuge
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
Yoshihiro Hishikawa
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
Shingo Okamoto
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
Manabu Sasaki
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
Shinya Tsuda
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
Shoichi Nakano
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
Yukinori Kuwano
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd. 1–18–13, Hashiridani, Hirakata, Osaka 573, Japan
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Abstract

A hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 869
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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