Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-10T09:52:34.215Z Has data issue: false hasContentIssue false
  • English
  • Français

Improvement of Gmr in NiFeCo/Cu Multilayers by a Layer - by - Layer Magnetic Field Sputtering

Published online by Cambridge University Press:  15 February 2011

K. Saito ,
Y. Yanagida ,
Y. Obi ,
H. Itoho  and
H. Fujimori
K. Saito
Affiliation:
IMR, Tohoku University, Sendai 980, Japan
Y. Yanagida
Affiliation:
Teikoku Tsushin Kogyo Co., Ltd., Kawasaki 211, Japan
Y. Obi
Affiliation:
IMR, Tohoku University, Sendai 980, Japan
H. Itoho
Affiliation:
Teikoku Tsushin Kogyo Co., Ltd., Kawasaki 211, Japan
H. Fujimori
Affiliation:
IMR, Tohoku University, Sendai 980, Japan
Get access

Abstract

NiFeCo/Cu multilayers fabricated by an improved magnetic field sputtering were investigated in order to achieve the soft GMR (giant magnetoresistance) with a high sensitivity at low magnetic fields. A magnetic field was applied to the film during sputter-deposition, and its field direction was changed alternately from layer to layer. Such an alternate field sputtering is called hereafter layer-by-layer magnetic field sputtering. The best GMR characteristics (large MR at low magnetic fields) were achieved when the angle between the directions of magnetic field applied to neighboring two magnetic layers was 90°. As one of the speculation, it has been considered that the result is attributed to the induced composite magnetic anisotropy which causes the magnetization to occur more dominantly by spin rotation than by domain wall movement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 384: Symposium L – Magnetic Ultrathin films, Multilayers and Surfaces , 1995 , 403
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Jimbo, M., Kanda, T., Goto, S., Tsunashima, S. and Uchiyama, S.: Jpn. J. appl. Phys., 31 (1992) L1348.Google Scholar
[2] Nakatani, R., Dei, T., Kobayashi, T., Sugita, Y.: IEEE Trans. Magn., 28 (1992) 2668.Google Scholar
[3] Kanda, T., Jimbo, M., Tsunashima, S., Goto, S., Kumazawa, M. and Uchiyama, S.; J. Magnetics Soc. Jpn., 17(1983)359.Google Scholar
[4] Jimbo, M., Tsunashima, S., Kanda, T., Goto, S. and Uchiyama, S.: J.Appl. Phys.,74 (1993) 3341.Google Scholar
[5] Inomata, K., Saito, Y., Hashimoto, S.: J. Magn. Magn. Mat., 121 (1993) 350.Google Scholar
[6] Kondo, J., Kumagai, S., Kubota, H. and Miyazaki, T.: J. Magn. Soc. Jpn., 19 (1995) 385.Google Scholar