Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-30T20:35:21.106Z Has data issue: false hasContentIssue false
  • English
  • Français

Improvements of a-Si:H/CsI(TI) X-RAY Detectors for Radiation Monitoring

Published online by Cambridge University Press:  21 February 2011

C. Manfredotti ,
F. Fizzotti ,
M. Boero ,
F. Cannistraci ,
E. Vittone ,
A. Torti  and
M. Turnaturi
C. Manfredotti
Affiliation:
Experimental Physics Dept., University of Torino, Via Giuria 1, Torino, Ind Consorzio INFM, Italy
E. Vittone
Affiliation:
Experimental Physics Dept., University of Torino, Via Giuria 1, Torino, Ind Consorzio INFM, Italy
M. Turnaturi
Affiliation:
IRCI, Borgaro Torinese (TO), Italy
Get access

Abstract

Photosensitive a-Si:H p-i-n diodes, working in photovoltaic mode, have been coupled to CsI(T1) scintillators for dosimetry applications to X-ray monitoring in the energy range from 50 keV up to 15 MeV. A “mesa” approach for p-i-n diodes has been adopted both in order to better define the geometry and to obtain very low dark current. In order to optimize the geometry, a computer program has been created which simulates light generation in the scintillator, the collection by the detector and the photovoltaic current obtained as a function of exposure rate.

Measurements have been carried out in the X-rays energy ranges 50-240 keV, at 6MeV and at 15 MeV. Detectors are linear in response and shows a good sensitivity, with the capability of measuring dose rates as low as 60 mR/h.

The agreement between experimental data and simulation outputs can be considered good.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 543
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Manfredotti, C., in Winter European Course on Amorphous Silicon, edited by Spear, W.E. and Manfredotti, C., (Folgaria, Italy, 1988).Google Scholar
[2] Antonuk, L.E., Boudry, T., Huong, W., Sham, D.L. Mc, Morton, E.J., Yorkston, J., Lange, M., Street, R.A., Med. Phys. 19, 1455 (1992)CrossRefGoogle Scholar
[3] Fujeda, I., Cho, G., Gee, J.D.T., Jung, T., Kaplan, S.N., Perez-Mendez, V., Wildermith, D., Street, R.A., IEEE Symp. Nucl. Sci., Washington 1990 Google Scholar
[4] Antonuk, L.E., Yorkston, J., Huang, W., Boundry, J., Morton, E.J., Longo, M.J., Street, R.A., Proc. Mat. Research Soc. Symposium, S. Francisco 1992 Google Scholar
[5] Manfredotti, C., Faccio, F., Fizzotti, F., Marchisio, R., Nucl. Instr. Meth. in Phys. Research. A322, 483 (1992)CrossRefGoogle Scholar
[6] Pochet, T. Dubeau, J. Equer, B. Karar, A., Hamel, L.A., Joum. of Appl. Phys. 68,1340 (1990)CrossRefGoogle Scholar
[7] Amato, G., Benedetto, G., Boarino, L. Spagnolo, R., Solid State Comm. 72,172 (1991)Google Scholar
[8] Tsuo, Y.S., Xu, Y., Baker, D.W., Deb, S.K., Mat. Research Soc. Proc. Symposium, Spring Meeting, Anaheim (1991)Google Scholar