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Impurity-Induced Defect States in Pb1−xGexTe Alloys Doped With Gallium

Published online by Cambridge University Press:  10 February 2011

E.P. Skipetrov ,
E.A. Zvereva ,
V.V. Belousov  and
L.A. Skipetrova
E.P. Skipetrov
Affiliation:
Physics Department, Moscow State University, 119899 Moscow, Russia, skip@mig.phys.msu.su
E.A. Zvereva
Affiliation:
Physics Department, Moscow State University, 119899 Moscow, Russia, skip@mig.phys.msu.su
V.V. Belousov
Affiliation:
Physics Department, Moscow State University, 119899 Moscow, Russia, skip@mig.phys.msu.su
L.A. Skipetrova
Affiliation:
Physics Department, Moscow State University, 119899 Moscow, Russia, skip@mig.phys.msu.su
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Abstract

Galvanomagnetic properties of n-Pb1−xGexTe<Ga>(O.04≤x≤O.08) single crystals have been investigated in the shielded from external background illumination chamber and under controlled illumination from infrared heat source. Low temperature activation range of the impurity conductivity on the dark curves of ρ(l/T) was revealed and attributed to the appearance of gallium-induced deep level E Ga in the gap of the alloys. It was shown that the alloys possess high infrared photosensitivity at temperatures below Tc=50%60 K, and effect of the persistent photoconductivity at helium temperatures was revealed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 333
Copyright
Copyright © Materials Research Society 2000

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