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In Situ Characterization of thin film Growth by Ftir Irras

Published online by Cambridge University Press:  25 February 2011

J. E. Butler ,
K. B. Koller  and
W. A. Schmidt
J. E. Butler
Affiliation:
Naval Research Laboratory, Chemistry Division, Washington, DC, 20375
K. B. Koller
Affiliation:
Naval Research Laboratory, Chemistry Division, Washington, DC, 20375
W. A. Schmidt
Affiliation:
Naval Research Laboratory, Electronics Science and Technology Division, Washington, DC, 20375.
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Abstract

In-situ analysis of low temperature Plasma Enhanced Chemical Vapor Deposition (PECVD) SiO2 films deposited on HgCdTe, Silicon, and Aluminum substrates was performed by double modulation Fourier Transform Infrared Reflection Absorption spectroscopy (FT-IRRAS). The sensitivity and selectivity of this technique are sufficient for an in-situ assessment of the film quality and reaction conditions at any stage of film growth. An oblique angle of incidence of ca. 557deg; was chosen to yield maximum sensitivity for the 1260 cm−1 LO mode of SiO2 on Si. The peak frequency and shape of the LO mode absorption band varied with the quality of the SiO2 films. This diagnostic technique can be applied readily to in-situ analysis of dielectric thin films formed under a variety of reaction conditions as long as the gaseous ambient is partially transmissive to the IR radiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 275
Copyright
Copyright © Materials Research Society 1989

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References

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