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In Situ Control of Energy Bandgap by Laser Enhanced Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

J. E. Epler ,
H. F. Chung ,
D. W. Treat  and
T. L. Paoli
J. E. Epler
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto CA 94304
H. F. Chung
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto CA 94304
D. W. Treat
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto CA 94304
T. L. Paoli
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto CA 94304
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Abstract

Laser-assisted crystal growth experiments have been performed in an upflow vertical metalorganic chemical vapor deposition reactor. An Ar+ laser (514.5 nm) is used to locally heat and photo-excite the surface adlayer during growth. The laser irradiation is observed to enhance the growth rate and Al composition of AlGaAs if the substrate temperature is ˜580 °C. The laser-grown AlGaAs epitaxy is single crystal with good surface morphology and is used to fabricate multiple wavelength light emitting diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 17
Copyright
Copyright © Materials Research Society 1988

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References

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