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In situ Fracture and Adhesion Failure of Al-Cu-Fe Quasicrystalline Films
Published online by Cambridge University Press: 11 February 2011
Abstract
Quasicrystalline precursor coatings were deposited on single crystal silicon and sapphire wafers by RF sputtering from an AlCuFe powder composite target. Synchrotron white beam radiography/topography and stress analysis were performed in situ on the wafers during heating to 495 or 585°C, and subsequent cooling. A plateau region of constant stress was present throughout most of the 1 hour anneals before a large tensile stress developed in the film during cooling due to coefficient of thermal expansion mismatch. Cracking was observed for films on both substrates at an average film stress of approximately 930 MPa. Distinct differences in the fracture behavior were observed for the two different substrates. X-ray diffraction performed on films after annealing suggested that texturing took place during the transition to a fully developed quasicrystalline structure.
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- Copyright © Materials Research Society 2003