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In Situ Spectroscopic Ellipsometry for Real Time Composition Control of Hg1−xCdxTe Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

R. Dat ,
F. Aqariden ,
W. M. Duncan ,
D. Chandra  and
H. D. Shih
R. Dat
Affiliation:
Raytheon TI Systems, Sensors and Infrared Laboratory, P.O Box. 655936, MS 150, Dallas, TX 75265, U.S.A
F. Aqariden
Affiliation:
Raytheon TI Systems, Sensors and Infrared Laboratory, P.O Box. 655936, MS 150, Dallas, TX 75265, U.S.A Permanent address: Microphysics Laboratory, Department of Physics, M/C 273, University of Illinois at Chicago, 845 W Taylor #2236SES, Chicago, IL 60607, U. S. A.
W. M. Duncan
Affiliation:
Texas Instruments Incorporated, Components and Materials Research Center, P. O. Box 655936, MS 147, Dallas, TX 75265, U.S.A
D. Chandra
Affiliation:
Raytheon TI Systems, Sensors and Infrared Laboratory, P.O Box. 655936, MS 150, Dallas, TX 75265, U.S.A
H. D. Shih
Affiliation:
Raytheon TI Systems, Sensors and Infrared Laboratory, P.O Box. 655936, MS 150, Dallas, TX 75265, U.S.A
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Abstract

Spectral ellipsometry (SE) was applied to in situ composition control of Hg1−xCdxTe grown by molecular beam epitaxy (MBE), and the impact of surface topography of the Hg1−xCdxTe layers on the accuracy of SE was investigated. Of particular importance is the presence of surface defects, such as voids in MBE- Hg1−xCdxTe layers. While dislocations do not have any significant impact on the dielectric functions, the experimental data in this work show that MBE- Hg1−xCdxTe samples having the same composition, but different void densities, have different effective dielectric functions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 377
Copyright
Copyright © Materials Research Society 1998

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References

[1] Zandian, M., Arias, J.M., Bajaj, J., Pasko, J.G., Bubulac, L.O., and DeWames, R.E., J. Electronic Materials 24, 1207 (1995).Google Scholar
[2] Chandra, D., Shih, H.D., Aqariden, F., Dat, R., Bevan, M.J., Gutzler, S., and Orent, T., J. Electronic Materials, 1998 (in press).Google Scholar
[3] Duncan, W.M., Bevan, M.J., and Shih, H.D., J. Vac. Sci. Technol. A15, 216 (1997).Google Scholar
[4] Duncan, W. M and Henck, S.A., Appl. Surface Sci. 63, 9 (1993).Google Scholar
[5] Henck, S.A., Duncan, W.M., Lowenstein, L.M., and Watts-Butler, S., J. Vac. Sci. Technol. A11, 1179 (1993).Google Scholar
[6] Duncan, W.M., Henck, S.A., Kuehe, J.W., Loewenstein, L.M. and Maung, S., J. Vac. Sci. Technol. B312, 2779 (1994).Google Scholar
[7] Bruggeman, D.A.G., Ann. Phys. (Leipzig) 24, 636 (1935).Google Scholar
[8] Aspnes, D.E., Am. J. Phys. 50, 704 (1982).Google Scholar