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In Situ Studies of Electron Cyclotron Resonance Plasma Etching of Semiconductors by Spectroscopic Ellipsometry

Published online by Cambridge University Press:  25 February 2011

S. Nafis ,
N. J. Ianno ,
Paul G. Snyder ,
John A. Woollam  and
Blame Johs
S. Nafis
Affiliation:
Center for Microelectronic and Optical Materials Research, Dept. of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588–0511
N. J. Ianno
Affiliation:
Center for Microelectronic and Optical Materials Research, Dept. of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588–0511
Paul G. Snyder
Affiliation:
Center for Microelectronic and Optical Materials Research, Dept. of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588–0511
John A. Woollam
Affiliation:
J. A. Woollam Co., 650 J Street, Lincoln, NE 68508.
Blame Johs
Affiliation:
J. A. Woollam Co., 650 J Street, Lincoln, NE 68508.
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Abstract

In situ ellipsometry at selected wavelengths in the spectral range 280 nm to 1000 nnn was performed during the rf bias assisted electron cyclotron resonance (ECR) etching of bulk silicon, GaAs, InP, and GaAs/AlGaAs/GaAs, and InGaAs/InP layered strcutures by a CCl2F2 based etch gas.

While real time thickness changes for bulk materials cannot be determined ellipsometrically, some insight into the etch mechanism may be gained by observing the effect of the process on the surface dynamically, and after the etch process has been completed. Monitoring of the layered structures during etching can provide a real time measure of the amount of material remaining in the layer being etched, and provide tight process control.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 819
Copyright
Copyright © Materials Research Society 1993

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