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In Situ Wafer Emissivity Variation Measurement in a Rapid Thermal Processor

Published online by Cambridge University Press:  28 February 2011

J-M. Dilhac ,
C. Ganibal  and
N. Nolhier
J-M. Dilhac
Affiliation:
LAAS-CNRS, 7 avenue du colonel Roche, 31077 Toulouse CEDEX, FRANCE
C. Ganibal
Affiliation:
LAAS-CNRS, 7 avenue du colonel Roche, 31077 Toulouse CEDEX, FRANCE
N. Nolhier
Affiliation:
LAAS-CNRS, 7 avenue du colonel Roche, 31077 Toulouse CEDEX, FRANCE
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Abstract

Wafer backside reflectivity measurements at room temperature have been performed in a rapid thermal processor equipped with two rows of heating lamps by measuring, with the process optical pyrometer, the light emitted by the lower row of the heating lamps and reflected by the wafer. The differences in reflectivity have been correlated with the process temperature variations induced by emissivity changes. Optical pyrometer recalibration procedures have then been established. It has been demonstrated that the reflectivity measurement, performed automatically for each wafer prior to the thermal cycle, may drastically improve the accuracy of temperature control.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 3
Copyright
Copyright © Materials Research Society 1991

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