Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-28T21:57:59.722Z Has data issue: false hasContentIssue false
  • English
  • Français

Incoherent Transport in Nanowire - The Effect of Electron-phonon Interaction

Published online by Cambridge University Press:  31 January 2011

Hideyuki Nishizawa  and
Satoshi Itoh
Hideyuki Nishizawa
Affiliation:
hideyuki.nishizawa@toshiba.co.jphinishi@kt.rim.or.jp, Toshiba Corporate R&D Center, Functional Materials Lab., Kawasaki, Japan
Satoshi Itoh
Affiliation:
satoshi.itoh@toshiba.co.jp, Toshiba Corporate R&D Center, Functional Materials Lab., Kawasaki, Japan
Get access

Abstract

The incoherent transport model based on electron-phonon interaction was introduced for calculating the current-voltage characteristics of the nanowire conductor. The current-voltage characteristics of silicon nanowire calculated based on this model was discussed. The charge transport was described by the rate equation containing the coherent (tunneling) and incoherent (energy dissipation) rates, and the incoherent rate was calculated from the Hamiltonian in which the electron-phonon interaction was incorporated. The coherent transition corresponds to the electronic transition between electrode states and channel states without any energy dissipation. On the other hand, the incoherent transition corresponds to the electronic transition between electrode states and channel states where the energy difference of those two states means a thermal dissipation. Therefore, in order to carry out the calculation by the rate equation, the density of states (DOSs) of the carriers in electrode and the channel and the DOS of the phonon in the channel are needed. The current-voltage characteristics were calculated by using the DOS of n-type semiconductor for the electrode and by using intrinsic semiconductor DOS for the channel. In addition, the calculation was performed by using the DOS of the silicon nanowire phonon.

Keywords

nanoscalenanostructureelectron-phonon interactions
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1206: Symposium M – Multifunction at the Nanoscale through Nanowires , 2009 , 1206-M11-61
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Zhang, Y., Cao, J. X., Xiao, Y., and Yan, X. H., J. App. Phys. 102, 104303 (2007).Google Scholar
2 Likharev, K., “Sub-20 nm Electron Device,” Advanced Semiconductor and Organic Nano-techniques, ed. Morkos, Hadis (Academic Press, 2003), pp. 237–302.Google Scholar
3. ITRS 2009 International Technology Roadmap for Semiconductors.Google Scholar
4 Lee, Sang-Kwon, Lee, Seung-Yong, Rogdakis, Konstantinos, Jang, Chan-Oh, Kim, Dong-Joo, Bano, Edwige, and Zekentes, Konstantinos, Solid State Communications, 149, 461 (2009)Google Scholar
5 Zhong, Zhaohui, Yang, Chen, and Lieber, Charles M., “Silicon Nanowires and Nanowire Hetero structures” Nanosilicon, ed. Kumar, Vijay (Elsevier, 2008), pp. 176–216.Google Scholar
6 Singh, Abhishek Kumar, Kumar, Vijay, and Kawazoe, Yoshiyuki, “Theoretical Advances in the Electronic and Atomic Structures of Silicon Nanotubes and Nanowires” Nanosilicon, ed. Kumar, Vijay (Elsevier, 2008), pp. 217–257.Google Scholar
7 Adu, Kofi W., Gutierrez, Humberto R., and Eklund, Peter C., “Phonons in Silicon Nanowires” Nanosilicon, ed. Kumar, Vijay (Elsevier, 2008), pp. 259–288.Google Scholar
8 Zwanzig, Robert, Nonequilibrium statistical mechanics, (Oxford, 2001), pp. 106–110.Google Scholar
9 Ponomareva, Inna, Menon, Madhu, Richter, Ernst, and Andriotis, Antonis N., Phys. Rev. B74, 125311 (2006).Google Scholar