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Influence of Ammoniating Temperatures on Microstructures, Morphologies and Optical Properties of GaN/Nb Nanostructures by RF Magnetron Sputtering Technique

Published online by Cambridge University Press:  18 May 2012

Feng Shi  and
Chengshan Xue
Feng Shi*
Affiliation:
College of Physics and Electronics, Shandong Normal University, Jinan, P.R.China, 250014
Chengshan Xue
Affiliation:
College of Physics and Electronics, Shandong Normal University, Jinan, P.R.China, 250014
*
*Corresponding author: Shi Feng, Tel & Fax: +86 531 86182521, Email:sf751106@sina.com.cn
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Abstract

GaN nanowires and nanorods have been successfully synthesized on Si (111) substrates by magnetron sputtering through ammoniating Ga2O3/Nb thin films and the effects of ammoniation temperatures on growth of GaN nanowires and nanorods were analyzed in detail. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectra were carried out to characterize microstructures, morphologies, and optical properties of GaN samples. The results demonstrate that sample after ammoniation at 950 °C is single crystal GaN with hexagonal wurtzite structure and high crystalline quality, having the size of 30 - 80 nm in diameter. After ammoniation at 1000 °C, GaN nanorods appear with smooth and clean surface and more than 100 nm in diameter. The optical properties of GaN nanowires grown at 950 °C and nanorods grown at 1000 °C are best with strong emission intensities.

Keywords

nanostructuresputteringluminescence
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1439: Symposium N/AA – Nanowires and Nanotubes—Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials , 2012 , pp. 17 - 23
Copyright
Copyright © Materials Research Society 2012

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