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The Influence of Arsenic Flux in the Defect Structure of MBE Deposited GaAs and Ga1−xAlxAs

Published online by Cambridge University Press:  21 February 2011

Z. Hatzopoulos ,
G. Kiriakidis ,
A. Georgacilas ,
N. Roditis  and
A. Christou
Z. Hatzopoulos
Affiliation:
Research Center of Crete, Heraklio Crete, Greece
G. Kiriakidis
Affiliation:
Research Center of Crete, Heraklio Crete, Greece
A. Georgacilas
Affiliation:
Research Center of Crete, Heraklio Crete, Greece
N. Roditis
Affiliation:
Research Center of Crete, Heraklio Crete, Greece
A. Christou
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
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Abstract

The dependence of the density of defects on the pressure ratio PAs/PGa and on the substrate temperature has been studied on a series of GaAs and GaAlAs samples prepared by MBE. Samples have also been desorbed prior to the MBE deposition by UV laser and the density of defects have been compared with the density of defects obtained in samples where thermal desorption occured. Optimum pressure ratios PAs/GPa and growth temperatures have been found for both GaAs and GaAlAs for minimum defect density. It is shown that insitu laser desorption, prior to MBE deposition is a feasible technique for attaining MBE structures with a low defect density, thus simplifying the substrate preparation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 23
Copyright
Copyright © Materials Research Society 1988

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References

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