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The Influence of Deposition Conditions on the Electronic Properties of a-Si:H Prepared in Expanding Thermal Plasma

Published online by Cambridge University Press:  01 February 2011

Monica Brinza  and
Guy J. Adriaenssens
Monica Brinza
Affiliation:
monica.brinza@fys.kuleuven.be, University of Leuven, Halfgeleiderfysica, Celestijnenlaan 200D, Leuven, 3001, Belgium
Guy J. Adriaenssens
Affiliation:
guy.adri@fys.kuleuven.be, University of Leuven, Halfgeleiderfysica, Celestijnenlaan 200D, Leuven, N/A, 3001, Belgium
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Abstract

A number of a-Si:H samples prepared in an expanding thermal plasma under varying conditions were examined by means of time-of-flight transient photocurrent measurements. A high deposition temperature allows high deposition rates while achieving high hole mobility and mobility-lifetime product. Lower hole mobility but higher μτ product result from slower deposition at lower temperature. Electron μτ products are uncharacteristically low for all samples due to pronounced deep trapping. RF biasing of the substrate does not improve the results.

Keywords

amorphouselectronic structuredefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A07-04
Copyright
Copyright © Materials Research Society 2006

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References

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