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Influence of Doping on the Lattice Dynamics of Gallium Nitride

Published online by Cambridge University Press:  15 February 2011

A. Kaschner ,
H. Siegle ,
A. Hoffmann ,
C. Thomsen ,
U. Birkle ,
S. Einfeldt  and
D. Hommel
A. Kaschner
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
H. Siegle
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
A. Hoffmann
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
C. Thomsen
Affiliation:
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
U. Birkle
Affiliation:
Institut für Festkörperphysik, FB 1, Univ. Bremen, Kufsteiner Str. NW 1, 28359 Bremen, Germany
S. Einfeldt
Affiliation:
Institut für Festkörperphysik, FB 1, Univ. Bremen, Kufsteiner Str. NW 1, 28359 Bremen, Germany
D. Hommel
Affiliation:
Institut für Festkörperphysik, FB 1, Univ. Bremen, Kufsteiner Str. NW 1, 28359 Bremen, Germany
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Abstract

We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, grown by molecular beam epitaxy (MBE). The influence of the different dopants on strain and free-carrier concentration was investigated. Furthermore, we report on several local vibrational modes (LVM) around 2200 cm-1 in Raman spectra of highly Mg-doped GaN. A possible explanation of these high-energy modes in terms of hydrogen-related vibrations is given. We also found a variety of new structures in the range of the GaN host lattice phonons. Secondary ion mass spectroscopy (SIMS) was applied to determine the concentration of magnesium and unintentionally incorporated hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.57
Copyright
Copyright © Materials Research Society 1999

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