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The Influence of Dose Rate on the Formation of CrSi2 by Ion Mixing

Published online by Cambridge University Press:  25 February 2011

S.-J. Kim ,
D. N. Jamieson ,
M-A. Nicolet  and
R. S. Averback
S.-J. Kim
Affiliation:
California Institute of Technology, Pasadena, CA 91125
D. N. Jamieson
Affiliation:
California Institute of Technology, Pasadena, CA 91125
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125
R. S. Averback
Affiliation:
University of Illinois, Urbana-Champaign, Urbana, IL 61801
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Abstract

The relationship between growth rate of CrSi2 and dose rate during Xe ion irradiation at 500K is investigated. Dose raies difffering by up to a factor of 40 have been utilized to study the relationship. For a fixed total dose, a lower dose rate results in a thicker silicide layer compound to a higher dose rate. The results are explained from radiation-enhanced diffusion theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 233
Copyright
Copyright © Materials Research Society 1987

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References

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