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Influence of Growth Conditions on Phase Separation of InGaN Bulk Material Grown by MOCVD

Published online by Cambridge University Press:  01 February 2011

Yong Huang ,
Omkar Jani ,
Eun Hyun Park  and
Ian Ferguson
Yong Huang
Affiliation:
fenwick@ece.gatech.edu, Georgia Institute of Technology, Electrical and Computer Engineering, 778 Atlantic Dr., Atlanta, GA, 30332-0250, United States
Omkar Jani
Affiliation:
jani@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA, 30332, United States
Eun Hyun Park
Affiliation:
ehpark@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA, 30332, United States
Ian Ferguson
Affiliation:
ianf@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA, 30332, United States
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Abstract

Different types of phase separation in thick InGaN layers were studied using photoluminescence (PL) and x-ray diffraction (XRD). InGaN films of 100 nm in thickness were grown on 2 μm GaN templates with an In molar fraction ranging from 0% to 20% by metal organic chemical phase deposition (MOCVD). It is shown that suppression of the phase separation in InGaN can be made possible by increasing the TMIn flow rate, decreasing the layer thickness and decreasing the growth rate. Based on the results, two types of phase separation, microscopic quantum dots and macroscopic domains, are proposed accordingly. The influence of the growth conditions on each type is summarized respectively in this paper.

Keywords

metalorganic depositionnitridex-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I07-20
Copyright
Copyright © Materials Research Society 2007

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References

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