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Influence of Growth Parameters and Annealing on Properties of MBE Grown GaAsSbN SQWs

Published online by Cambridge University Press:  01 February 2011

Liangjin Wu ,
Shanthi Iyer ,
Kalyan Nunna ,
Sudhakar Bharatan ,
Jia Li  and
Ward J. Collis
Liangjin Wu
Affiliation:
Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411
Shanthi Iyer
Affiliation:
Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411
Kalyan Nunna
Affiliation:
Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411
Sudhakar Bharatan
Affiliation:
Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411
Jia Li
Affiliation:
Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411
Ward J. Collis
Affiliation:
Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411
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Abstract

In this paper we report the growth of GaAsSbN/GaAs single quantum well (SQW) heterostructures by molecular beam epitaxy (MBE) and their properties. A systematic study has been carried out to determine the effect of growth conditions, such as the source shutter opening sequence and substrate temperature, on the structural and optical properties of the layers. The substrate temperatures in the range of 450-470 °C were found to be optimal. Simultaneous opening of the source shutters (SS) resulted in N incorporation almost independent of substrate temperature and Sb incorporation higher at lower substrate temperatures.

The effects of ex-situ annealing in nitrogen ambient and in-situ annealing under As overpressure on the optical properties of the layers have also been investigated. A significant increase in photoluminescence (PL) intensity with reduced full width at half maxima (FWHM) in conjunction with a blue shift in the emission energy was observed on annealing the samples. In in-situ annealed samples, the PL line shapes were more symmetric and the temperature dependence of the PL peak energy indicated significant decrease in the exciton localization energy as exhibited by a less pronounced “S-shaped curve”. The “inverted S-shaped curve” observed in the temperature dependence of PL FWHM is also discussed. 1.61 μm emission with FWHM of 25 meV at 20K has been obtained in in-situ annealed GaAsSbN/GaAs SQW grown at 470 °C by SS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J18.34
Copyright
Copyright © Materials Research Society 2005

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References

1 Klar, P. J., Progress in Solid state Chemistry 31, 301 (2003).Google Scholar
2 Harris, J. S. Jr , Semicond. Sci. Technol. 17, 880 (2002).Google Scholar
3 Kurtz, S. R., Klem, J. F., Allerman, A. A., Sieg, R. M., Seager, C. H. and Jones, E. D., Appl. Phys. Lett. 80, 1379 (2002).Google Scholar
4 Asbeck, P. M., Welty, R. J., Tu, C. W., Xin, H. P. and Welser, R. E., Semicond. Sci. Technol. 17, 898 (2002).Google Scholar
5 Ha, W., Gambin, V., Bank, S., Wisktey, M., Yuen, H., Kim, S., and Harris, J.S. Jr , IEEE Jouranal of Quantum Electronics 38, 1260 (2002).Google Scholar
6 Fischer, M., Reinhardt, M. and Forchel, A., Electron. Lett. 36, 1208 (2000).Google Scholar
7 Harris, James S. Jr J. Cryst. Growth 278, 3 (2005).Google Scholar
8 Volz, K., Gambin, V., Ha, W., Wistey, M. A., Yuen, H., Bank, S., and Harris, J. S., Journal of Crystal Growth 251, 360 (2003).Google Scholar
9 Ungaro, G., Roux, G. Le, Teissier, R. and Harmand, J. C., Electron. Lett. 35, 1246 (1999).Google Scholar
10 Harmand, J. C., Caliman, A., Rao, E. V. K., Largeau, L., Ramos, J., Teissier, R., Traverse, L., Ungaro, G., Theys, B. and Dias, I. F. L., Semicond. Sci. Technol. 17, 778 (2002).Google Scholar
11 Harmand, J. C., Ungaro, G., Ramos, J., Rao, E. V. K., Saint-Girons, G., Teissier, R., Roux, G. Le, Largeau, L., and Patriarche, G., J. Crystal Growth 227-228, 553 (2001).Google Scholar
12 Lourenco, S. A., Dias, I. F. L., Pocas, L. C. and Duarte, J. L., J. Appl. Phys. 93, 4475(2003).Google Scholar
13 Bian, L. F., Jisng, D. S., Tan, P. H., Lu, S. L., Sun, B. Q., Li, L. H., Harmand, J. C., Solid State Communications 132, 707 (2004).Google Scholar
14 Wu, L., Iyer, S., Nunna, K., Li, J., Bharatan, S., Collis, W., and Matney, K., Journal of Crystal Growth, in press.Google Scholar
15 Li, J., Iyer, S., Bharatan, S., Wu, L., Nunna, K., Collis, W., Bajaj, K., and Matney, K., to be published in June issue of Journal of Applied Physics. Google Scholar
16 Marcadet, X., Rakovska, A., Prevot, I., Glastre, G., Vinter, B., and Berger, V., Journal of Crystal Growth 227-228, 609 (2001).Google Scholar
17 Kaspi, R., Evans, K. R., Journal of Crystal Growth 175/176, 838 (1997).Google Scholar
18 Varshni, Y. P., Physica (Utrecht) 34, 149 (1967).Google Scholar
19 Ng, T. K., Yoon, S. F., Wang, S. Z., Loke, W. K., and Fan, W. J., J. Vac. Sci. Technol. B 20, 964 (2002).Google Scholar
20 Pinault, M.-A. and Tournie, E., Appl. Phys. Lett. 78, 1562 (2001).Google Scholar
21 Shirakata, S., Kondow, M. and Kitatani, T., Appl. Phys. Lett. 79, 54 (2001).Google Scholar