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Influence of Growth Temperature on Ordering in InGaAs Grown on (001) InP USING Tertiarybutylarsine Source MOCVD

Published online by Cambridge University Press:  21 February 2011

R.S. McFadden ,
M. Skowronski  and
S. Mahajan
R.S. McFadden
Affiliation:
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA.
M. Skowronski
Affiliation:
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA.
S. Mahajan
Affiliation:
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA.
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Abstract

In0 53Ga0 47As layers were grown on (001 ) InP substrates by MOCVD. Growth conditions were chosen to optimize CuPt type LI1 ordering on the group III sublattice.

The surface morphology is shown to be strongly dependent on substrate degradation prior to growth. This degradation is highly dependent on temperature and initial gas flows. A survey of conditions leading to degradation as well as a safe method of initiating growth are given.

Films showing atomic ordering, as ascertained by cross sectional TEM, were examined by x-ray diffraction. A method of evaluating the structure factor for superlattice reflections is given. X-ray analysis was performed using a variation of the classical method of order parameter determination1. The order parameter is shown to vary with growth temperature and to have a maximum value of-0.21 at 550 C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 287
Copyright
Copyright © Materials Research Society 1994

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References

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