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Influence of Hcl and H2 on the Heteroepitaxial Growth of 3C-SiC Films on Si(100) Via Low-Temperature Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

J. H. Edgar  and
Y. Gao
J. H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506–5102
Y. Gao
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506–5102
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Abstract

The roles of HCl and H2 on the low temperature epitaxial growth of 3C-SiC on Si (100) in the SiH4-C2H-HCl-H2 system were examined. At a deposition temperature of 1000 °C with pure H2 as the carrier gas, the deposition rate decreased by approximately 70%, and the structure of the films changed from randomly oriented polycrystals, to textured polycrystals, to single crystals as the Cl/Si gas input ratio was increased from 0 to 40. Without any HCl present, the deposition rate did not change when the H2 carrier gas was replaced with up to 75% He. With a Cl/Si input ratio of 40, the growth rate decreased by approximately 70% as the He fraction was increased to 75%. Films deposited without HCl became more textured as H2 was replaced with He, and single crystal films were produce with a 75% He - 25% H2 mixture as the carrier gas. In contrast, with an input Cl/Si ratio of 40, all films were single crystal, but the rocking curve FWHM increased as H2 was replaced with He.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 699
Copyright
Copyright © Materials Research Society 1997

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