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The Influence of Hydrogen on the Electrical and Photoelectric Properties of Photodiodes Based on Indium Monoselenide

Published online by Cambridge University Press:  15 February 2011

S.I. Drapak ,
V.M. Kaminskii ,
Z.D. Kovalyuk  and
V.V. Netyaga
S.I. Drapak
Affiliation:
I.M. Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Chernivtsi Department, 5 Iryna Vilde Str., 58001, Chernivtsi, Ukraine.
V.M. Kaminskii
Affiliation:
I.M. Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Chernivtsi Department, 5 Iryna Vilde Str., 58001, Chernivtsi, Ukraine.
Z.D. Kovalyuk
Affiliation:
I.M. Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Chernivtsi Department, 5 Iryna Vilde Str., 58001, Chernivtsi, Ukraine.
V.V. Netyaga
Affiliation:
I.M. Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Chernivtsi Department, 5 Iryna Vilde Str., 58001, Chernivtsi, Ukraine.
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Abstract

Influence of hydrogen intercalation on indium monoselenide is investigated measuring electrical properties of based on it such photosensitive structures as metal-insulator-semiconductor (MIS) and Mott diode (MD). It is established that intercalation of the basic semiconductor with hydrogen leads to the improvement of diodic properties of the MIS structures whereas those for the MD structure becomes worse. For the both structures charge transfer mechanisms are analyzed on the basis of their band diagrams.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 884: Symposium GG – Materials and Technology for Hydrogen Storage and Generation , 2005 , GG3.7
Copyright
Copyright © Materials Research Society 2005

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References

1 Kozmik, I.D., Kovalyuk, Z.D., Grygortchak, I.I. and Bahmatyuk, B.P., Inorganic Materials 5, 754 (1987). (in Russian).Google Scholar
2 Julien, C., Eddrief, M., Balkanski, M., Hatriricraniotis, E. and Kambas, K., Phys. Stat. Sol. 2, 687 (1985).Google Scholar
3 Drapak, S.I., Orletskii, V.B., Kovalyuk, Z.D., Netyaga, V.V. and Fotiy, V.D., Tech. Phys. Lett., 29, 480 (2003).Google Scholar
4 Milnes, A.G. and Feucht, D.L., Heterojunctions and Metal-Semiconductor Junctions, (Academic, New York, 1972) p.324.Google Scholar
5 Tatsuyama, C. and Ichimura, S., II Nuovo Cimento 123, 352 (1977).Google Scholar
6 Sze, S.M., Physics of Semiconductor Devices, (Willey-Intersci., New York, 1981) p. 456.Google Scholar
7 Martinez-Pastor, J., Segura, A., Valdes, J.L. and Chevy, A., J. Appl. Phys. 62 (1987).Google Scholar
8 Bahmatyuk, B.P., Kovalyuk, Z.D. and Mintyanskii, I.V., Bull.Acad. Sci. USSR. Neorg. Mater. Ser. 20, 1922 (1984). (in Russian).Google Scholar