Hostname: page-component-6bf8c574d5-t27h7 Total loading time: 0 Render date: 2025-02-22T23:23:24.881Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Rapid Thermal Processing on Minority Carrier Diffusion Length in Silicon

Published online by Cambridge University Press:  25 February 2011

Wolfgang A. Eichammer ,
Thuong-QUat Vu  and
P. Siffert
Wolfgang A. Eichammer
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), 23 rue du Loess, F-67037 Strasbourg Cedex, France
Thuong-QUat Vu
Affiliation:
Now at: California Institute of Technology, Pasadena, California 91125
P. Siffert
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), 23 rue du Loess, F-67037 Strasbourg Cedex, France
Get access

Abstract

Minority carrier diffusion length measurements (SPV-method) are presented which illustrate the role of contamination, residual impurity content and surfaces in the formation of RTP-induced recombination centers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 185
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Leskoschek, W., Feichtinger, H., and Vidrich, G., Phys. Status Solidi A20, 601 (1973) (and references therein).Google Scholar
2. Weber, E. and Riotte, H.G., Appl. Phys. Lett. 33, 433 (1978).Google Scholar
3. Lee, Y.H., Kleinhenz, R.L., and Corbett, J.W., Appl, Phys. Lett. 31, 142 (1977).Google Scholar
4. Weber, E., Appl. Phys. A30, 1 (1983).Google Scholar
5. Davis, J.R. Jr., Rohatgi, A., Hopkins, R.H., Blais, P.D., Rai-Choudhury, P., McCormick, J.R., and Mollenkopf, H.C., IEEE Trans. Electron Devices ED–27, 677 (1980).CrossRefGoogle Scholar
6. ANSI/ASTM F391-78, 1979 Annual Book of ASTM Standards, part 43 Electronics, ASTM, Philadelphia, 1979), p. 770.Google Scholar
7. -Thuong-Quat, Vu, Eichhammer, W., and Siffert, P., Appl. Phys. Lett. 53, 1928 (1988).Google Scholar
8. Weber, E., in Impurity Diffusion and Gettering in Silicon, Mat. Res. Soc. Symp. Proc., ed by Fair, R.B., Pearce, C.W. and Washburn, J. (MRS, Pittsburg, 1985), Vol. 36, p. 3.Google Scholar
9. Schmidt, P.F. and Pearce, C.W., J. Electrochem. Soc. 128, 630 (1981).CrossRefGoogle Scholar
10. Dunham, S.T. and Plummer, J.D., J. Appl. Phys. 59, 2541 (1986).CrossRefGoogle Scholar
11. , Vu-Thuong-Quat, Eichhammer, W., and Siffert, P., Appl. Phys. Lett. (March 27, 1989).Google Scholar
12. Hass, W., Glawischnig, H., Lichti, G., and Bleier, A., J. Electron. Mater. 7, 525 (1978).Google Scholar