Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-01-15T01:10:45.005Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of Silicon Dopant and Processing on Thermoelectric Properties of B4C Ceramics

Published online by Cambridge University Press:  10 February 2011

Ke-Feng Cai ,
Ce-Wen Nan  and
Xin-Min Min
Ke-Feng Cai
Affiliation:
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
Ce-Wen Nan
Affiliation:
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
Xin-Min Min
Affiliation:
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
Get access

Abstract

B4C ceramics doped with various content of Si (0 to 2.03 at%) are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of XRD and EPMA. Their electrical conductivity and Seebeck coefficient of the samples are measured from room temperature up to 1500K. The electrical conductivity increases with temperature, and more rapidly after 1300K; the Seebeck coefficient of the ceramics also increases with temperature and rises to a value of about 320μVK−1. The value of the figure of merit of Si-doped B4C rises to about 4 × 10−4K−1 at 1500K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 545: Symposium Z – Thermoelectric Materials 1998 - The Next Generation… , 1998 , 131
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wood, C., Rep. Prog. Phys. 51, 514 (1988).CrossRefGoogle Scholar
2. Thevenot, Bouchacourt, F., J. Mat.Sci. 20, 1237 (1985).Google Scholar
3. Aselage, T.L., Mat. Res. Soc. Symp. Proc. 234, 145(1991).CrossRefGoogle Scholar
4. Wood, C. and Emin, D., Phy. Rev. B 29(8), 4582 (1984).CrossRefGoogle Scholar
5. Wood, C., Emin, D. and Grey, P. E., Phy. Rev. B 31(10), 6811 (1985).CrossRefGoogle Scholar
6. Emin, D., Phy. Rev. B 38(9), 6401 (1988).CrossRefGoogle Scholar
7. Bylander, D.M., Kleinman, L., and Lee, S., Phy. Rev. B 42(2), 1394 (1990).CrossRefGoogle Scholar
8. Wood, C., in Boron-Rich Solids, AIP Conf. Proc., Emin, D., Aselage, T., Beckel, C., Howard, I., and Wood, C., eds., American Institute of physics, New York, 140, 362 (1986).Google Scholar
9. Min, X. M., Cai, K. F. and Nan, C. W., J. Wuhan University of Technology, 20, 28 (1998).Google Scholar
10. ASTM Specification C373, ASTM Standards part 13, American Society for Testing and Materials, Philadelphia, (1969).Google Scholar