Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-13T02:30:21.029Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Structural Defects on the Electronic Properties of Carbon Nanotubes Examined by Scanning Tunnelling Microscopy

Published online by Cambridge University Press:  01 February 2011

Cristina E. Giusca  and
Ravi Silva
Cristina E. Giusca
Affiliation:
c.giusca@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Guildford, United Kingdom
Ravi Silva
Affiliation:
s.silva@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Guildford, United Kingdom
Get access

Abstract

The electronic properties of carbon nanotubes are quite often drastically affected by the presence of defects that can develop during nanotube growth, processing or characterization too. Some of these defects such as pentagon-heptagon rings, substitutional impurities, vacancies and dislocations are of topological nature, and can sometimes create on-tube intramolecular junctions, as found by previous scanning tunnelling microscopy studies.

Our recent STM experiments reveal for the first time a much more complicated junction structure, a hybrid single-walled carbon nanotube consisting of a distinct coiled structure located between two straight segments, each of different helicity. We characterise the hybrid junction at the atomic level and describe its electronic behaviour that has important implications in the practical design of functional components for nanoelectronic applications.

Keywords

nanoscalescanning tunneling microscopy (STM)electronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1258: Symposia P/Q/R – Low-Dimensional Functional Nanostructures-Fabrication, Characterization and Applications , 2010 , 1258-R05-21
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Odom, T.W. Huang, J.L. Kim, P. Lieber, C.M. Nature 391, 62, (1998).Google Scholar
2 Wildöer, J.W.G., Venema, L.C. Rinzler, A.G. Smalley, R.E. Dekker, C. Nature 391, 59, (1998).Google Scholar
3 Hertel, T. Walkup, R.E. Ph. Avouris, Phys. Rev. B58, 13870, (1998).Google Scholar
4 Clauss, W. Bergeron, D.J. Johnson, A.T. Phys. Rev. B58, R4266, (1998).Google Scholar
5 Giusca, C.E. Tison, Y. Silva, S.R.P. Phys. Rev. B76, 035429 (2007).Google Scholar
6 Giusca, C.E. Tison, Y. Silva, S.R.P. NanoLett. 8 (10), 3350, (2008).Google Scholar
7 Lee, G.D. Wang, C.Z. Yoon, E. Hwang, N.M., Ho, K.M. Appl. Phys. Lett. 92, 043104 (2008).Google Scholar
8 Ouyang, M. Huang, J.L. Cheung, C.L. Lieber, C.M. Science 291, 97, (2001).Google Scholar
9 Charlier, J.C. Acc. Chem. Res. 35, 1063, (2002).Google Scholar
10 Gao, R.P. Wang, Z.L. Fan, S.S. J.Phys. Chem. B104, 1227, (2000).Google Scholar
11 Zhang, X.B. Zhang, X.F. Bernaerts, D. Tendeloo, G. Van, Amelinckx, S. Landuyt, J. Van et al. , Europhys. Lett. 27, 141, (1994).Google Scholar
12 Koos, A.A. Ehlich, R. Horvath, Z.E. Osvath, Z. Gyulai, J. Nagy, J.B. et al. , Mater. Sci. Eng. C, 23 (1–2), 275, (2003).Google Scholar
13 Saveliev, A.V. Merchan-Merchan, W., Kennedy, L.A. Combust. Flame, 135 (1–2), 27, (2003).10.1016/S0010-2180(03)00142-1Google Scholar
14 Biro, L.P. Mark, G.I. Lambin, P. IEEE Transactionsn Nanotechnology, 2 (4), 362, (2003).Google Scholar
15 Ertekin, E. Chrzan, D.C. Daw, M.S. Phys. Rev. B79, 155421, (2009).Google Scholar