Hostname: page-component-6bf8c574d5-7jkgd Total loading time: 0 Render date: 2025-02-22T08:12:10.599Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of Substrate Surface Chemistry on GaAs - on - Si Growth

Published online by Cambridge University Press:  28 February 2011

R. D. Bringans ,
M. A. Olmstead ,
F. A. Ponce ,
D. K. Biegelsen ,
B. S. Krusor  and
R. D. Yingling
R. D. Bringans
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
M. A. Olmstead
Affiliation:
Department of Physics, University of California, Berkeley, CA 94720
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
D. K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
B. S. Krusor
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. D. Yingling
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Get access

Abstract

Several surface treatment techniques have been used to study the effect of the Si surface on subsequent GaAs-on-Si epitaxy. In particular, the effect on the degree of island formation is addressed. Experiments have been carried out with GaAs film thicknesses in the range from one monolayer to around 50nm. Core level spectroscopy results for the monolayer films give information about the bonding character at the interface and suggest methods of improving the degree of two-dimensional growth. A particular Ga-prelayer technique is examined with high resolution TEM and found to give significantly different results than the standard MBE growth technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 51
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Biegelsen, D. K., Ponce, F. A., Smith, A. J. and Tramontana, J. C., J. Appl. Phys., 61, 1856, (1987).Google Scholar
2 Hull, R. and Fischer-Colbrie, A., Appl. Phys. Lett., 50, 851, (1987).Google Scholar
3 Bringans, R. D., Olmstead, M. A., Uhrberg, R. I. G. and Bachrach, R. Z., Mat. Res. Soc. Symp. Proc. 9, 201, (1987); Appl. Phys. Lett, 51 523, (1987); Phys. Rev. B, 36 9569, (1987).Google Scholar
4 Bringans, R. D., Uhrberg, R. I. G., Olmstead, M. A. and Bachrach, R. Z., Phys. Rev. B, 34, 7447, (1986).Google Scholar
5 Biegelsen, D. K., Ponce, F. A., Krusor, B.S., Yingling, R. D. and Tramontana, J. C., Appl. Phys. Lett.,52 in press.Google Scholar
6 Krusor, B. S., Biegelsen, D. K., Yingling, R. D. and Abelson, J. R., submitted to J. Vac. Sci. and Technol. (1988).Google Scholar
7 Won, T., Munns, G., Houdre, R. and Morkoc, H., Appl. Phys. Lett., 49, 1257 (1986).Google Scholar