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Influence of Thermally-Induced Defects on the Transient Photoconductivity in a-Si:H

Published online by Cambridge University Press:  26 February 2011

A. Werner  and
M. Kunst
A. Werner
Affiliation:
Hahn-Meitner-institut, Bereich Strahlenchemie, D-1000 Berlin 39, Federal Republic of Germany
M. Kunst
Affiliation:
Hahn-Meitner-institut, Bereich Strahlenchemie, D-1000 Berlin 39, Federal Republic of Germany
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Abstract

Contactless transient photoconductivity measurements in intrinsic and n-type a-Si:H were performed at 220 °C and at room temperature where also rapidly quenched films were investigated. In undoped samples the measurements suggest thermally induced structure changes which lead to an increase of the effective electron lifetime. In n-type samples the effective electron lifetime decreases with temperature, what may be explained by an increase of the hole emission rate with temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 303
Copyright
Copyright © Materials Research Society 1988

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