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Infrared Photoconductivity and Photoluminescence from InAs/Ga1–xInxSb Strained-Layer Superlattices

Published online by Cambridge University Press:  28 February 2011

R. H. Miles ,
D. H. Chow  and
T. C. Mcgill
R. H. Miles
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, CA 90265
D. H. Chow
Affiliation:
T. J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
T. C. Mcgill
Affiliation:
T. J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
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Abstract

We have examined spectrally resolved photoconductivity and photoluminescence from InAs/Ga1–xInxSb strained-layer superlattices, which have been proposed as infrared detectors in the 8-14 μm region. Our measurements indicate that the energy gaps of the strained–layer superlattices are substantially smaller than those of InAs/GaSb superlattices with similar layer thicknesses, in agreement with previous theoretical predictions. Measurements on InAs/Ga1–xInxSb superlattices with x=0 and 0.25 and layer thicknesses of 25 – 45 A indicate superlattice band gaps of 3 – 15 μm, in excellent agreement with gaps calculated by a two band k · p model. Our results demonstrate that far-infrared energy gaps are compatible with the thin layers necessary for strong optical absorption in type-IT superlattices, and suggest that InAs/Ga1–xInxSb superlattices are promising candidates for far-infrared detection.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 303
Copyright
Copyright © Materials Research Society 1990

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References

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