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Infrared Photoconductivity in Heavily Nitrogen Doped a-Si:H

Published online by Cambridge University Press:  31 January 2011

David J Shelton ,
James C Ginn ,
Kevin R Coffey  and
Glenn D Boreman
David J Shelton
Affiliation:
dshelton@mail.ucf.edu, University of Central Florida, CREOL, 4000 Central Florida Blvd, Orlando, Florida, 32816-2700, United States
James C Ginn
Affiliation:
jcginn@creol.ucf.edu, University of Central Florida, CREOL, Orlando, Florida, United States
Kevin R Coffey
Affiliation:
krcoffey@mail.ucf.edu, University of Central Florida, AMPAC, Orlando, Florida, United States
Glenn D Boreman
Affiliation:
boreman@creol.ucf.edu, University of Central Florida, College of Optics and Photonics, Orlando, Florida, United States
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Abstract

The generation of high frequency steady-state photoconductivity in nitrogen doped hydrogenated amorphous silicon (a-Si:H-N) films has been demonstrated at infrared (IR) frequencies of 650 to 2000 cm-1 or 15 to 5 μm in wavelength. This allows IR photoconductivity to be observed using a simple thermal source. In order to produce high frequency photoconductivity effects the plasma frequency must be increased to the desired device operation frequency or higher as described by the Drude model. IR ellipsometry was used to measure the steady-state permittivity of the a-Si:H-N films as a function of pump illumination intensity. The largest permittivity change was found to be Δεr = 2 resulting from a photo-carrier concentration on the order of 1022 cm-3. IR photoconductivity is shown to be limited by the effective electron mobility at IR frequencies.

Keywords

infrared (IR) spectroscopyphotoconductivityoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1153: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009 , 2009 , 1153-A02-02
Copyright
Copyright © Materials Research Society 2009

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