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Infrared Spectra of Ultra-Thin SiO2 Grown on Si Surfaces

Published online by Cambridge University Press:  21 February 2011

T. Yamazaki ,
S. Miyazaki ,
C. H. Bjorkman ,
M. Fukuda  and
M. Hirose
T. Yamazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
C. H. Bjorkman
Affiliation:
Research Center for Integrated Systems, Hiroshima University, Higashi-Hiroshima 724, Japan
M. Fukuda
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
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Abstract

The structure of thin SiO2 films thermally grown on Si(100) and Si(111) surfaces has been characterized by using infrared internal reflection and x-ray photoelectron spectroscopy. It is found that the infrared absorption peak due to the LO phonon mode originating from the Si-O-Si stretching vibration shows a considerable red shift in the thickness range below 30A. This red shift is interpreted in terms of the compressive stress near the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 419
Copyright
Copyright © Materials Research Society 1994

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References

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