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InGaN Double-Heterostructures and Dh-Leds on Hvpe Gan-on-Sapphire Substrates

Published online by Cambridge University Press:  10 February 2011

K. S. Boutros ,
J. S. Flynn ,
V. Phanse ,
R. P. Vaudo ,
G. M. Smith ,
J. M. Redwing ,
T. R. Tolliver  and
N. G. Anderson
K. S. Boutros
Affiliation:
ATMI, 7 Commerce Dr., Danbury, CT 06810.
J. S. Flynn
Affiliation:
ATMI, 7 Commerce Dr., Danbury, CT 06810.
V. Phanse
Affiliation:
ATMI, 7 Commerce Dr., Danbury, CT 06810.
R. P. Vaudo
Affiliation:
ATMI, 7 Commerce Dr., Danbury, CT 06810.
G. M. Smith
Affiliation:
ATMI, 7 Commerce Dr., Danbury, CT 06810.
J. M. Redwing
Affiliation:
ATMI, 7 Commerce Dr., Danbury, CT 06810.
T. R. Tolliver
Affiliation:
Dept. of Electrical and Com. Eng., Univ. of Mass. at Amherst, Amherst, MA 01003.
N. G. Anderson
Affiliation:
Dept. of Electrical and Com. Eng., Univ. of Mass. at Amherst, Amherst, MA 01003.
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Abstract

We report on the growth of InGaN films, and the fabrication and characterization of GaN homojunction LEDs and InGaN double heterostructure (DH) LEDs on HVPE GaNon- sapphire substrates. The use of these substrates facilitates the III-nitrides growth process, as it avoids the use of complicated buffer layers. We have achieved InGaN films with strong and sharp band-to-band photoluminescence (PL) from 370 to 540 nm. Typical In 0.o9Ga0. g9N/GaN DH films had double-crystal XRD FWHM ∼ 300 arcsec, and 400 nm peak PL emission with FWHM ∼ 100 meV. DH-LEDs were fabricated with InGaN layers with various compositions, and produced strong electroluminescence (EL) in the blue and blue/green regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1047
Copyright
Copyright © Materials Research Society 1998

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