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InGaN Laser Diodes Grown on SiC Substrate Using Low-Pressure Metal-Organic Vapor Phase Epitaxy

Published online by Cambridge University Press:  10 February 2011

A. Kuramata ,
K. Domen ,
R. Soejima ,
K. Horino ,
S. Kubota  and
T. Tanahashi
A. Kuramata
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
K. Domen
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
R. Soejima
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
K. Horino
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
S. Kubota
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
T. Tanahashi
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
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Abstract

We report the crystal growth and the characteristics of InGaN multiple quantum well (MQW) laser diodes grown on a 6H-SiC substrate using a low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). We discuss the buffer layer, the control of InGaN and AlGaN alloy composition, the magnesium doping of GaN and AlGaN, and the characteristics of the MQW structure. We also demonstrate the room-temperature pulsed operation of the laser diode. The threshold voltage was reduced to 15 V by improving the p-contact resistance. The threshold current was reduced to 500 mA by changing the MQW structure and employing high reflection coating.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1185
Copyright
Copyright © Materials Research Society 1998

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References

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