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InGaN structure influence on efficiency droop

Published online by Cambridge University Press:  21 March 2014

Oleg Rabinovich
Oleg Rabinovich*
Affiliation:
National University of Science and Technology “Moscow Institute of Steel and Alloys”, P.O. Box 409, Moscow, 119313, Russian Federation.
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Abstract

Simulation results of InGaN light-emitting diodes and efficiency droop are presented. A special method for investigating the changes in the semiconductor devices characteristics due to different influencing factors is developed.

The cause of efficiency droop was detected-large difference in carrier lifetimes. The simulation results are used to suggest several techniques for improving LED efficiency up to 10-15 %.

Keywords

III-Vsimulationcrystallographic structure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 15 - 22
Copyright
Copyright © Materials Research Society 2014 

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References

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