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Inherent Buffer-layer Formation on Chalcopyrite Absorbers

Published online by Cambridge University Press:  31 January 2011

Christian Pettenkofer ,
Andreas Hofmann ,
Carsten Lehmann  and
Alexandra Dombrowa
Christian Pettenkofer
Affiliation:
pettenkofer@hmi.de, Helmholtz-Zentrum Berlin, E-I4, Berlin, Germany
Andreas Hofmann
Affiliation:
andreas.hofmann@helmholtz-berlin.de, Helmholtz-Zentrum berlin, E-I4, Berlin, Germany
Carsten Lehmann
Affiliation:
carsten.lehmann@hmi.de, Helmholtz-Zentrum berlin, E-I4, Berlin, Germany
Alexandra Dombrowa
Affiliation:
alexandradombrowa@freenet.de, Helmholtz-Zentrum Berlin, E-I4, Berlin, Germany
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Abstract

We report on epitaxial growth of ZnO on polycrystalline and (112) orientated CuInS2 and CuInSe2 thin films. Step-by-step growth and investigation by photoelectron spectroscopy (PES) and low energy electron diffraction (LEED) provided information on the growth mode and the electronic structure of the ZnO-CuInS2-interface. During the initial growth no ZnO is deposited. Instead a monolayer of ZnS is formed by depletion the CuInS2 surface of excess sulfur. Thereafter, the ZnO growth starts on the ZnS buffer layer. The band alignment derived from PES shows that the ZnS buffer layer is thin enough to provide a beneficial band alignment for photovoltaic applications. CuInSe2 (112) samples showed a similar behaviour, but at the chosen deposition temperature of 450°C only ZnSe growth is detected. At lower temperatures ZnO growth on top of ZnSe is observed. XPEEM experiments show an inhomogeneous interface.

Keywords

epitaxyphotoemissionphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1210: Symposium Q – Photovoltaic Materials and Manufacturing Issues II , 2009 , 1210-Q06-08
Copyright
Copyright © Materials Research Society 2010

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