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Initial Growth and Interface Structure of CdTe Thin Films Grown by MBE on 4° Miscut Si Substrates

Published online by Cambridge University Press:  15 February 2011

S.-C. Y. Tsen ,
David J. Smith ,
S. Rujirawat  and
S. Sivananthan
S.-C. Y. Tsen
Affiliation:
Department of Physics and Astronomy and Center for Solid State Science, Arizona State University, Tempe, Arizona 85287, USA
David J. Smith
Affiliation:
Department of Physics and Astronomy and Center for Solid State Science, Arizona State University, Tempe, Arizona 85287, USA
S. Rujirawat
Affiliation:
Department of Physics, University Of Illinois, Chicago, Illinois 60607, USA
S. Sivananthan
Affiliation:
Department of Physics, University Of Illinois, Chicago, Illinois 60607, USA
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Abstract

CdTe thin films with thicknesses in the range of 60˜100 nm have been grown on miscut (001) Si surfaces under different precursors, such as Te and As, with one cycle annealing. The thin-film microstructure was studied in cross section using high-resolution electron microscopy. Atomicresolution images revealed several interesting features of the initial growth of the heteroepitaxial CdTe thin films. With As as the precursor, the films initially grew in three different orientation variants (commonly referred to as domains): (A) CdTe (111)//Si (001) with CdTe (1–10)//Si(110); (B) CdTe (111)//Si (001) with CdTe (11–2)//Si(110), and (C) CdTe (001) // Si (001) with CdTe (110) // Si (110). Each variant has demonstrated its own characteristic defects such as twinning, interface Lomer dislocations and {111} stacking faults. With the [001] growth direction, the CdTe film became defect-free by having about 13° tilt relative to Si [001] such that CdTe (1–11) and Si(−111) planes aligned sideways at the interface. With Te as the precursor, A- and B-type variants were mainly observed. The interfaces were sharper, especially for the A-type interface, but the film adhesion was weaker than when As was the precursor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 440: Symposia CA – Structure and Evolution of Surfaces , 1996 , 265
Copyright
Copyright © Materials Research Society 1997

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References

[1] Faurie, J.P., Sporken, R., Chen, Y.P., Lange, M.D. and Sivananthan, S., Mat, Sci. Eng., B16 (1993) 51 Google Scholar
[2] Chen, Y.P., Faurie, J.P. and Sivananthan, S., J. Electron. Mater. 24 (1995) 475 Google Scholar
[3] Tsen, S.-C. Y., Smith, D. J., Hutchins, J.W., Skromme, B.J., Chen, Y.P. and Sivananthan, S., J. Crystal Growth 159 (1996) 58 Google Scholar
[4] Smith, D. J., Tsen, S.-C. Y., Chen, Y.P., Faurie, J.P. and Sivananthan, S., Appl. Phys. Lett. 67 (1995) 1591 Google Scholar
[5] Almeida, L.A., Chen, Y.P., Faure, J.P., Sivananthan, S., Smith, D. J. and Tsen, S.-C. Y. J. Elect. Mat. 25 (1996) 1402 Google Scholar
[6] Sporken, R., Chen, Y.P., Sivananthan, S., Lange, M.D. and Faurie, J.P., J. Vac. Sci. Tech. B10 (1992) 1405 Google Scholar
[7] Newcomb, S.B., Boxer, C.S. and Bithell, E.G., Inst. Phys. Conf. Ser 93 (1988) 43 Google Scholar
[8] Wallis, D.J., Nellist, P.D., Sivananthan, S., Browning, N.D. and Pennycook, S. J., Micro. and Microanalysis (1996)110Google Scholar
[9] Smith, D. J., Sivananthan, S. and Tsen, S.-C. Y., JIMIS-8 Conf. Proceedings Trans. JIM, to be published.Google Scholar