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Initial Oxynitridation of a Si(001)-2×1 Surface by NO

Published online by Cambridge University Press:  10 February 2011

Noriyuki Miyata ,
Heiji Watanabe  and
Masakazu Ichikawa
Noriyuki Miyata
Affiliation:
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP) Tsukuba, 305-0046, Japan
Heiji Watanabe
Affiliation:
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP) Tsukuba, 305-0046, Japan
Masakazu Ichikawa
Affiliation:
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP) Tsukuba, 305-0046, Japan
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Abstract

We have investigated the initial oxynitridation of an atomically flat Si(001)-2×l surface by NO. We found that appropriate oxynitridation conditions, in which oxide decomposition does not occur, are required to suppress the roughness of the NO-reacted Si surface. Under these conditions, we investigated the growth behavior and chemical structure. The first oxynitridation, in which NO reacts with the first Si layer on the Si(001)-2×l surface, takes place in a layer-bylayer manner caused by two-dimensional nucleation. However, further oxynitridation for the second Si layer proceeds in a three-dimensional manner in which the atomic-scale roughness at the oxynitride/Si interface increases. In addition, under our oxynitridation conditions, N is incorporated as N ≡ Si3, even though the oxynitride is ultrathin.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 233
Copyright
Copyright © Materials Research Society 2000

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Footnotes

*

Present address: Fundamental Research Laboratories, NEC Corporation, Tsukuba, 305-8501, Japan

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