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InN on GaN Heterostructure Growth by Migration Enhanced Epitaxial Afterglow (MEAglow)

Published online by Cambridge University Press:  10 January 2012

Peter W. Binsted ,
Kenneth Scott A. Butcher ,
Dimiter Alexandrov ,
Penka Terziyska ,
Dimka Georgieva ,
Rositsa Gergova  and
Vasil Georgiev
Peter W. Binsted
Affiliation:
Electrical Engineering, Semiconductor Research Lab, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1, Canada
Kenneth Scott A. Butcher
Affiliation:
Electrical Engineering, Semiconductor Research Lab, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1, Canada Meaglow Ltd., 1294 Balmoral St, Suite 150, Thunder Bay, ON P7B 5Z5, Canada
Dimiter Alexandrov
Affiliation:
Electrical Engineering, Semiconductor Research Lab, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1, Canada Meaglow Ltd., 1294 Balmoral St, Suite 150, Thunder Bay, ON P7B 5Z5, Canada
Penka Terziyska
Affiliation:
Electrical Engineering, Semiconductor Research Lab, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1, Canada
Dimka Georgieva
Affiliation:
Electrical Engineering, Semiconductor Research Lab, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1, Canada
Rositsa Gergova
Affiliation:
Electrical Engineering, Semiconductor Research Lab, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1, Canada
Vasil Georgiev
Affiliation:
Electrical Engineering, Semiconductor Research Lab, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1, Canada Meaglow Ltd., 1294 Balmoral St, Suite 150, Thunder Bay, ON P7B 5Z5, Canada
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Abstract

In this paper we discuss the formation of InN on GaN heterostructures. Film growth was accomplished using a new method coined Migration Enhanced Epitaxial Afterglow (MEAglow), an improved form of pulsed delivery Plasma Enhanced Chemical Vapour Deposition (PECVD) [1]. Initial x-ray diffraction (XRD) analysis results indicated that an InGaN alloy layer formed under the InN during growth. No GaN was seen from the original buffer layer. It was postulated that indium metal deposited prior to complete nitridation diffused into the relatively thin GaN layer producing InGaN. To verify the integrity of the insulating GaN layer, a third party GaN substrate was substituted. Results were unchanged. Parameters were then modified to reduce the amount of indium used for the initial metal deposition. XRD results indicated a sharper interface between the semi-insulating GaN and conductive InN layer. Hall Effect measurements are included. We’ve shown that the growth of a device suitable heterostructure is possible using the MEAglow technique.

Keywords

chemical vapor deposition (CVD) (deposition)thin filmnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o07-41
Copyright
Copyright © Materials Research Society 2012

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References

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